Influences of ion energy on morphology and preferred orientation of chromium thin films prepared by ion beam and vapor deposition

1998 ◽  
Vol 16 (4) ◽  
pp. 2489-2494 ◽  
Author(s):  
Naoto Kuratani ◽  
Akinori Ebe ◽  
Kiyoshi Ogata
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Preferred Orientation ◽  
Ion Energy

Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate

2006 ◽  
Vol 518 ◽  
pp. 155-160
Author(s):  
V. Milinović ◽  
M. Milosavljević ◽  
M. Popović ◽  
M. Novaković ◽  
D. Peruško ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Incident Angle ◽  
Ion Beam ◽  
Preferred Orientation ◽  
Thin Layers ◽  
Phase Identification ◽  
Ion Energy ◽  
Tin Thin Films

In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressure of Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 - 1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.

SiO2/TiO2 thin films with variable refractive index prepared by ion beam induced and plasma enhanced chemical vapor deposition

2006 ◽  
Vol 500 (1-2) ◽  
pp. 19-26 ◽  
Author(s):  
F. Gracia ◽  
F. Yubero ◽  
J.P. Holgado ◽  
J.P. Espinos ◽  
A.R. Gonzalez-Elipe ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Tio2 Thin Films

Nano-Structured TiN Thin Films Deposited by Single Ion Beam Reactive Sputtering

2007 ◽  
Vol 555 ◽  
pp. 303-308
Author(s):  
Ž. Bogdanov ◽  
N. Popović ◽  
M. Zlatanović ◽  
B. Goncić ◽  
Z. Rakočević ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Ion Beam ◽  
Ion Source ◽  
Preferred Orientation ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Substrate Current ◽  
Tin Thin Films ◽  
Negative Substrate Bias

The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (Vacc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I220/d), lattice spacing (d220) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with Vacc, nearly constant (220) peak broadening with the increase of N2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.

Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering

2015 ◽  
Vol 26 (7) ◽  
pp. 4888-4893 ◽  
Author(s):  
Junjun Huang ◽  
Weiyan Wang ◽  
Xuyang Fang ◽  
Jinhua Huang ◽  
Ruiqin Tan ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Hydrogen Ion ◽  
Ion Energy

Internal stress in thin films prepared by ion beam and vapor deposition

1994 ◽  
Vol 66 (1-3) ◽  
pp. 310-312 ◽  
Author(s):  
Naoto Kuratani ◽  
Osamu Imai ◽  
Akinori Ebe ◽  
Satoshi Nishiyama ◽  
Kiyoshi Ogata
Keyword(s):  
Thin Films ◽  
Internal Stress ◽  
Vapor Deposition ◽  
Ion Beam

Ion Beam Assisted Deposition of Cubic Boron Nitride Thin Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Secondary Phase ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Argon Ions

ABSTRACTBoron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.

Graphitization of thin films formed by focused-ion-beam chemical-vapor-deposition

2009 ◽  
Vol 18 (2-3) ◽  
pp. 490-492 ◽  
Author(s):  
Kazuhiro Kanda ◽  
Noriko Yamada ◽  
Makoto Okada ◽  
Jun-ya Igaki ◽  
Reo Kometani ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor
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