Development of electron cyclotron resonance and inductively coupled plasma high density plasma etching for patterning of NiFe and NiFeCo

1998 ◽  
Vol 16 (3) ◽  
pp. 1697-1701 ◽  
Author(s):  
K. B. Jung ◽  
E. S. Lambers ◽  
J. R. Childress ◽  
S. J. Pearton ◽  
M. Jenson ◽  
...  
1990 ◽  
Vol 56 (15) ◽  
pp. 1424-1426 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Kinsella ◽  
D. Johnson ◽  
C. Constantine

1991 ◽  
Vol 236 ◽  
Author(s):  
S. Sumie ◽  
H. Takamatsu ◽  
H. Tsunaki ◽  
Y. Nishimoto ◽  
Y Nakai

AbstractA highly sensitive laser probe for photo-acoustic displacement(PAD) has been developed and applied to the monitoring of low-level lattice damage in semiconductors. Since a photodisplacement laser probe with the sensitivity of 0.1 picometers is employed in this measurement, lower density damage for instance, formed by 50 keV B+ implantation with a dose of 5X109 ions/cm2 can be detected. Correlation of the PAD with damage density was obtained in B+ implantation. Therefore, quantitative damage density can be obtained from the relation for lightly damaged layers, such as formed by chemomechanical polishing and by electron cyclotron resonance plasma etching. This technique is useful-for monitoring of low damage density surface.


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