Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma

O. Joubert; G. S. Oehrlein; Y. Zhang

doi:10.1116/1.578849

Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578849 ◽

1994 ◽

Vol 12 (3) ◽

pp. 658-664 ◽

Cited By ~ 50

Author(s):

O. Joubert ◽

G. S. Oehrlein ◽

Y. Zhang

Keyword(s):

Aspect Ratio ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Etch Rate ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Density ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma ◽

Density Plasma

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Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578850 ◽

1994 ◽

Vol 12 (3) ◽

pp. 665-670 ◽

Cited By ~ 43

Author(s):

O. Joubert ◽

G. S. Oehrlein ◽

M. Surendra

Keyword(s):

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Reactive Ion Etching ◽

Electron Cyclotron ◽

High Density ◽

Ion Etching ◽

Lag Model ◽

Resonance Plasma ◽

Density Plasma

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Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Cited By ~ 20

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Plasma

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Electrical properties of electron cyclotron resonance plasma-deposited silicon dioxide: effect of the oxygen to silane flow ratio

Semiconductor Science and Technology ◽

10.1088/0268-1242/11/3/023 ◽

1996 ◽

Vol 11 (3) ◽

pp. 422-426 ◽

Cited By ~ 6

Author(s):

M J Hernandez ◽

J Garrido ◽

J Martinez ◽

J Piqueras

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Flow Ratio ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Role of ions in electron cyclotron resonance plasma-enhanced chemical vapor deposition of silicon dioxide

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588003 ◽

1995 ◽

Vol 13 (1) ◽

pp. 118 ◽

Cited By ~ 34

Author(s):

K. L. Seaward

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.349264 ◽

1991 ◽

Vol 70 (6) ◽

pp. 3301-3313 ◽

Cited By ~ 52

Author(s):

D. A. Carl ◽

D. W. Hess ◽

M. A. Lieberman ◽

T. D. Nguyen ◽

R. Gronsky

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Dc Bias ◽

Resonance Plasma

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Etched profile distortions in high density electron cyclotron resonance plasma

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587513 ◽

1994 ◽

Vol 12 (6) ◽

pp. 3363 ◽

Cited By ~ 5

Author(s):

Masahiro Yoneda

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Density ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. II. H2 addition to electron cyclotron resonance plasma employing CHF3

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580076 ◽

1996 ◽

Vol 14 (4) ◽

pp. 2011-2019 ◽

Cited By ~ 40

Author(s):

Kunimasa Takahashi ◽

Masaru Hori ◽

Toshio Goto

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Surface Reactions ◽

Electron Cyclotron ◽

High Density ◽

Electron Cyclotron Resonance Plasma ◽

H2 Addition ◽

Resonance Plasma

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Characterization of a high-density electron-cyclotron resonance plasma source operating in nitrogen

Review of Scientific Instruments ◽

10.1063/1.1578154 ◽

2003 ◽

Vol 74 (7) ◽

pp. 3279-3283 ◽

Cited By ~ 5

Author(s):

E. I. Toader ◽

A. Fredriksen ◽

A. Aanesland

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Source ◽

Electron Cyclotron ◽

High Density ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches

Journal of Electronic Materials ◽

10.1007/s11664-003-0053-y ◽

2003 ◽

Vol 32 (7) ◽

pp. 686-691 ◽

Cited By ~ 12

Author(s):

J. D. Benson ◽

A. J. Stoltz ◽

P. R. Boyd ◽

M. Martinka ◽

J. B. Varesi ◽

...

Keyword(s):

Aspect Ratio ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Etching of polysilicon in a high-density electron cyclotron resonance plasma with collimated magnetic field

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585860 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1312 ◽

Cited By ~ 6

Author(s):

D. Dane

Keyword(s):

Magnetic Field ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Density ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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