Spectroscopic ellipsometry investigation of nickel silicide formation by rapid thermal process

1998 ◽  
Vol 16 (3) ◽  
pp. 1820-1824 ◽  
Author(s):  
Yaozhi Hu ◽  
Sing Pin Tay
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Thermal Process ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Rapid Thermal Process

Effects of various Co/TiN and Co/Ti layer stacks and the salicide rapid thermal process conditions on cobalt silicide formation

2004 ◽  
Vol 76 (1-4) ◽  
pp. 311-317 ◽  
Author(s):  
S. Buschbaum ◽  
O. Fursenko ◽  
D. Bolze ◽  
D. Wolansky ◽  
V. Melnik ◽  
...  
Keyword(s):  
Thermal Process ◽  
Process Conditions ◽  
Cobalt Silicide ◽  
Silicide Formation ◽  
Rapid Thermal Process

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

In situ study of the growth kinetics and interfacial roughness during the first stages of nickel–silicide formation

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2253-2257 ◽  
Author(s):  
L. Ehouarne ◽  
M. Putero ◽  
D. Mangelinck ◽  
F. Nemouchi ◽  
T. Bigault ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Interfacial Roughness ◽  
In Situ Study

Non-Prefabricated Nanocrystal Mesoporous TiO2-Based Photoanodes Tuned by A Layer-by-Layer and Rapid Thermal Process

2009 ◽  
Vol 2 (1) ◽  
pp. 265-269 ◽  
Author(s):  
Junchao Tao ◽  
Yan Sun ◽  
Meiying Ge ◽  
Xin Chen ◽  
Ning Dai
Keyword(s):  
Thermal Process ◽  
Mesoporous Tio2 ◽  
Layer By Layer ◽  
Rapid Thermal Process

Intermediate band materials obtained by rapid thermal process of Co-implanted silicon

2017 ◽  
Vol 209 ◽  
pp. 522-524 ◽  
Author(s):  
Jiren Yuan ◽  
Haibin Huang ◽  
Xinhua Deng ◽  
Mingang Gong ◽  
Cuicui Liu ◽  
...  
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Intermediate Band
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