InAs/AlSb heterostructure field-effect transistors using a Si-doped InAs/AlSb short-period superlattice modulation doping barrier

C. R. Bolognesi; M. W. Dvorak; D. H. Chow

doi:10.1116/1.581035

InAs/AlSb heterostructure field-effect transistors using a Si-doped InAs/AlSb short-period superlattice modulation doping barrier

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581035 ◽

1998 ◽

Vol 16 (2) ◽

pp. 843-845 ◽

Cited By ~ 9

Author(s):

C. R. Bolognesi ◽

M. W. Dvorak ◽

D. H. Chow

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Modulation Doping ◽

Short Period ◽

Heterostructure Field Effect Transistors ◽

Si Doped

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Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer

IEEE Electron Device Letters ◽

10.1109/led.2003.817869 ◽

2003 ◽

Vol 24 (10) ◽

pp. 622-624 ◽

Cited By ~ 16

Author(s):

Yan-Kuin Su ◽

Sun-Chin Wei ◽

Ruey-Lue Wang ◽

Shoou-Jinn Chang ◽

Chih-Hsin Ko ◽

...

Keyword(s):

Field Effect ◽

Flicker Noise ◽

Field Effect Transistors ◽

Carrier Injection ◽

Heterostructure Field Effect Transistors ◽

Si Doped

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InAs channel heterostructure‐field effect transistors with InAs/AlSb short‐period superlattice barriers

Applied Physics Letters ◽

10.1063/1.117235 ◽

1996 ◽

Vol 69 (23) ◽

pp. 3531-3533 ◽

Cited By ~ 9

Author(s):

C. R. Bolognesi ◽

J. E. Bryce ◽

D. H. Chow

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Period ◽

Heterostructure Field Effect Transistors

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InP-based heterostructure field-effect transistors with high-quality short-period (InAs)3m/(GaAs)1m superlattice channel layers

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80134-x ◽

1995 ◽

Vol 150 ◽

pp. 1225-1229 ◽

Cited By ~ 6

Author(s):

U. Auer ◽

R. Reuter ◽

C. Heedt ◽

W. Prost ◽

F.J. Tegude

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

High Quality ◽

Short Period ◽

Heterostructure Field Effect Transistors

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

IEEE Electron Device Letters ◽

10.1109/55.506356 ◽

1996 ◽

Vol 17 (7) ◽

pp. 325-327 ◽

Cited By ~ 138

Author(s):

M.A. Khan ◽

Q. Chen ◽

J.W. Yang ◽

M.S. Shur ◽

B.T. Dermott ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Cited By ~ 3

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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