Erratum: “Three-dimensional deposition of TiN film using low frequency (50 Hz) plasma chemical vapor deposition” [J. Vac. Sci. Technol. A 15, 1897 (1997)]

1997 ◽  
Vol 15 (6) ◽  
pp. 3170-3170
Author(s):  
M. Shimozuma ◽  
H. Date ◽  
T. Iwasaki ◽  
H. Tagashira ◽  
M. Yoshino ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Tin Film

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

The Development of Polyethylene Naphthalate Films by Low-pressure High-frequency Plasma Chemical Vapor Deposition System with Advance Oxidations Process

2015 ◽  
Vol 18 (1) ◽  
Author(s):  
Nuttee Thungsuk ◽  
Toshifumi Yuji ◽  
Narong Mungkung ◽  
Yoshimi Okamura ◽  
Atsushi Fujimaru ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Polyethylene Naphthalate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
High Frequency Plasma ◽  
Frequency Plasma

AbstractThe low-pressure high-frequency plasma chemical vapor deposition (CVD) system was developed with non-thermal plasma process to study the Polyethylene naphthalate (PEN) surface characteristics. Plasma surface treatment by oxygen can improve the adhesive properties. A mixture of Ar and O

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