Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

M. C. Hugon; F. Delmotte; B. Agius; J. L. Courant

doi:10.1116/1.580859

Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580859 ◽

1997 ◽

Vol 15 (6) ◽

pp. 3143-3153 ◽

Cited By ~ 38

Author(s):

M. C. Hugon ◽

F. Delmotte ◽

B. Agius ◽

J. L. Courant

Keyword(s):

Silicon Nitride ◽

Electrical Properties ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Low Temperature Plasma ◽

Temperature Plasma ◽

Metal Insulator ◽

Semiconductor Structures

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Electrical properties of silicon nitride films grown on a SiGe layer by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(96)09264-4 ◽

1997 ◽

Vol 294 (1-2) ◽

pp. 214-216 ◽

Cited By ~ 1

Author(s):

E Dufour-Gergam ◽

F Meyer ◽

F Delmotte ◽

M.C Hugon ◽

B Agius ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Electrical Properties ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Sige Layer ◽

Silicon Nitride Films ◽

Resonance Plasma

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Microstructure and Electrical Properties of Tantalum Oxide Thin Film Prepared by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.6691 ◽

1994 ◽

Vol 33 (Part 1, No. 12A) ◽

pp. 6691-6698 ◽

Cited By ~ 41

Author(s):

Il Kim ◽

Sung-Duck Ahn ◽

Bok-Won Cho ◽

Sung-Tae Ahn ◽

Jeong Yong Lee ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Tantalum Oxide ◽

Chemical Vapor ◽

Oxide Thin Film ◽

Resonance Plasma

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I‐Vcharacteristics of electron‐cyclotron‐resonance plasma‐enhanced chemical‐vapor‐deposition silicon nitride thin films

Journal of Applied Physics ◽

10.1063/1.356455 ◽

1994 ◽

Vol 75 (2) ◽

pp. 979-984 ◽

Cited By ~ 26

Author(s):

Yoo‐Chan Jeon ◽

Ho‐Young Lee ◽

Seung‐Ki Joo

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Radio frequency magnetron sputtering of Au and low temperature plasma enhanced chemical vapor deposition of silicon nitride for ring ultramicroelectrodes fabrication

Journal of Electroanalytical Chemistry ◽

10.1016/j.jelechem.2006.07.030 ◽

2006 ◽

Vol 596 (2) ◽

pp. 124-130 ◽

Cited By ~ 1

Author(s):

Mingzhi Zhu ◽

Zhuangde Jiang ◽

Weixuan Jing ◽

Biao Yang

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Low Temperature ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Temperature Plasma ◽

Radio Frequency Magnetron Sputtering ◽

Temperature Plasma

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Passivation of GaAs Power Field-Effect Transistor Using Electron Cyclotron Resonance Chemical Vapor Deposition Silicon Nitride Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l1659 ◽

1994 ◽

Vol 33 (Part 2, No. 12A) ◽

pp. L1659-L1661 ◽

Cited By ~ 3

Author(s):

Edward Yi Chang ◽

Kun-Chun Lin ◽

Janne-Wha Wu ◽

Tzu-Hung Chen ◽

John-Sea Chen ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Field Effect ◽

Field Effect Transistor ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Effect Transistor

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Electron cyclotron resonance plasma chemical vapor deposition of large area uniform silicon nitride films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577175 ◽

1991 ◽

Vol 9 (6) ◽

pp. 3071-3077 ◽

Cited By ~ 31

Author(s):

S. Y. Shapoval ◽

V. T. Petrashov ◽

O. A. Popov ◽

M. D. Yoder ◽

P. D. Maciel ◽

...

Keyword(s):

Silicon Nitride ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Large Area ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Silicon Nitride Films ◽

Resonance Plasma

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Factors affecting interface-state density and stress of silicon nitride films deposited on Si by electron-cyclotron resonance chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581442 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2931-2940 ◽

Cited By ~ 19

Author(s):

D. Landheer ◽

K. Rajesh ◽

D. Masson ◽

J. E. Hulse ◽

G. I. Sproule ◽

...

Keyword(s):

Silicon Nitride ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Factors Affecting ◽

Silicon Nitride Films

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Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition

Microelectronic Engineering ◽

10.1016/s0167-9317(03)00412-x ◽

2003 ◽

Vol 70 (1) ◽

pp. 109-114 ◽

Cited By ~ 17

Author(s):

K.B. Sundaram ◽

R.E. Sah ◽

H. Baumann ◽

K. Balachandran ◽

R.M. Todi

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Wet Etching ◽

Ecr Plasma

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Effects of annealing in O2 and N2 on the electrical properties of tantalum oxide thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02655461 ◽

1995 ◽

Vol 24 (10) ◽

pp. 1435-1441 ◽

Cited By ~ 33

Author(s):

IL Kim ◽

Jong-Seok Kim ◽

Oh-Seung Kwon ◽

Sung-Tae Ahn ◽

John S. Chun ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Tantalum Oxide ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Resonance Plasma

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Low-Temperature Preparation of SrBi2Ta2O9Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Metalorganic Chemical Vapor Deposition and Their Electrical Properties

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.5496 ◽

2000 ◽

Vol 39 (Part 1, No. 9B) ◽

pp. 5496-5500 ◽

Cited By ~ 7

Author(s):

Norimasa Nukaga ◽

Masatoshi Mitsuya ◽

Hiroshi Funakubo

Keyword(s):

Electrical Properties ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Metalorganic Chemical Vapor Deposition ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Low Temperature Preparation ◽

Resonance Plasma ◽

Metalorganic Chemical ◽

Temperature Preparation

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