Quantitative analysis of low‐energy Xe+ion bombardment damage of Si(100) surfaces using x‐ray photoelectron spectroscopy

1994 ◽  
Vol 65 (5) ◽  
pp. 552-554 ◽  
Author(s):  
Z. H. Lu ◽  
D. F. Mitchell ◽  
M. J. Graham
2009 ◽  
Vol 41 (6) ◽  
pp. 453-462 ◽  
Author(s):  
Joanna S. Stevens ◽  
Sven L. M. Schroeder

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.


Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 38-44 ◽  
Author(s):  
Xiulan Duan ◽  
Jian Liu ◽  
Yang Chen ◽  
Ziqing Li ◽  
Pengfei Zhu ◽  
...  

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