Effects of Ion Bombardment on Chemical Interactions at SiC Surface and AI/SiC Interfaces

1996 ◽  
Vol 438 ◽  
Author(s):  
Heather L. Beck ◽  
Moon-H. Lee ◽  
Fumio S. Ohuchi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Oxygen Affinity ◽  
Ion Bombardment ◽  
Aluminum Carbide ◽  
X Ray ◽  
Preferential Sputtering ◽  
Strong Surface

AbstractAn investigation into the SiC surface and its interaction with aluminum, in particular, focusing on the effect of ion bombardment and adsorption of oxygen, is described. Stoichiometric and carbon rich and SiC surfaces were produced and analyzed “in situ” by Auger electron spectroscopy and x-ray photoelectron spectroscopy. Cubic SiC shows preferential sputtering under Ar ion bombardment, leading to carbon rich surface, whereas high temperature annealing also causes carbon rich surface. Activity of these surfaces was compared with oxygen and aluminum adsorption. Stoichiometrically sputtered surface showed vastly increased oxygen affinity, whereas carbon-rich sputtered surfaces did not. Aluminum deposition caused significant Al-C interaction for the stoichometric ion-bombarded surface. Aluminum carbide was induced catalytically upon heating in the presence of oxygen. Carbon-rich surfaces had, however, no significant interactions with as-deposited Al due to strong surface C-C bonds.

Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Depth Profiling ◽  
Oxide Formation ◽  
X Ray ◽  
Chemical States ◽  
The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

New approach in the monitoring and characterization of titanium nitride thin films

1999 ◽  
Vol 14 (2) ◽  
pp. 436-441 ◽  
Author(s):  
S. Logothetidis ◽  
E. I. Meletis ◽  
G. Kourouklis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ex Situ ◽  
New Approach ◽  
X Ray ◽  
Plasma Energy

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.

scholarly journals Metal/GaN contacts studied by electron spectroscopies

2000 ◽  
Vol 5 (S1) ◽  
pp. 915-921
Author(s):  
J. Dumont ◽  
R. Caudano ◽  
R. Sporken ◽  
E. Monroy ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Plasma ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
X Ray

Au/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

In situ X-ray photoelectron and Auger electron spectroscopic characterization of reaction mechanisms during Li-ion cycling

2016 ◽  
Vol 52 (90) ◽  
pp. 13257-13260 ◽  
Author(s):  
Ching-Yen Tang ◽  
Richard T. Haasch ◽  
Shen J. Dillon
Keyword(s):  
Photoelectron Spectroscopy ◽  
Reaction Mechanisms ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopic Characterization ◽  
X Ray ◽  
Li Ion ◽  
Novel Design

We demonstrate a novel design for in situ X-ray photoelectron spectroscopy and in situ Auger electron spectroscopy, and we applied this technique to characterize the evolution of bonding and chemistry during cycling of nanoparticle electrodes.

Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAs

1998 ◽  
Vol 13 (7) ◽  
pp. 1799-1807 ◽  
Author(s):  
J. S. Pan ◽  
C. H. A. Huan ◽  
A. T. S. Wee ◽  
H. S. Tan ◽  
K. L. Tan
Keyword(s):  
Surface Layer ◽  
Auger Electron Spectroscopy ◽  
Angular Dependence ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Incident Angle ◽  
Ion Beam ◽  
X Ray ◽  
Preferential Sputtering

Ion beam nitridation (IBN) of GaAs at room temperature was studied as a function of N2+ ion incident angle at ion energy of 10 keV. The ion beam bombardment surface area of GaAs was characterized in situ by both Auger electron spectroscopy (AES) and small spot-size x-ray photoelectron spectroscopy (XPS). Thin GaN reaction layers are formed at all N2+ ion incident angles, whereas the formation of As–N bonds has not been found. However, the degree of nitridation of Ga decreases with increasing incident angle. The observed angular dependence of the N incorporation can be explained in terms of sputtering yield, indicating that the growth kinetics can be described as a dynamic process comprising the accumulation of N and sputter removal of the surface layer. N2+ ion bombardment causes the depletion of As from the surface region because of the preferential sputtering of As from GaAs. The preferential sputtering of As reduces with increasing N2+ ion incident angle. The angular dependent behavior of preferential sputtering of As by 10 keV N2+ ions can be attributed to the angular dependence of GaN surface layer formation.

Metal/GaN Contacts Studied by Electron Spectroscopies

1999 ◽  
Vol 595 ◽  
Author(s):  
J. Dumont ◽  
R. Caudano ◽  
R. Sporken ◽  
E. Monroy ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Plasma ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
X Ray

AbstractAu/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

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