Contribution of the x‐ray absorption spectroscopy to study TiO2thin films prepared by ion beam induced chemical vapor deposition

1995 ◽  
Vol 77 (2) ◽  
pp. 591-597 ◽  
Author(s):  
A. Caballero ◽  
D. Leinen ◽  
A. Fernández ◽  
A. Justo ◽  
J. P. Espinós ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Absorption Spectroscopy ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Absorption

scholarly journals Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Yingda Qian ◽  
Yuanlan Liang ◽  
Xuguang Luo ◽  
Kaiyan He ◽  
Wenhong Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Absorption Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Absorption ◽  
Metalorganic Chemical

A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.

Determination of Zn-containing sites in β-Ga2O3 film grown through mist chemical vapor deposition via X-ray absorption spectroscopy

2020 ◽  
Vol 59 (7) ◽  
pp. 070909
Author(s):  
Noritake Isomura ◽  
Tatsuji Nagaoka ◽  
Yukihiko Watanabe ◽  
Katsuhiro Kutsuki ◽  
Hiroyuki Nishinaka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Absorption Spectroscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray ◽  
Ga2o3 Film ◽  
X Ray Absorption

A soft X-ray absorption study of nanodiamond films prepared by hot-filament chemical vapor deposition

2003 ◽  
Vol 372 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
Y.H Tang ◽  
X.T Zhou ◽  
Y.F Hu ◽  
C.S Lee ◽  
S.T Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Study ◽  
X Ray ◽  
Hot Filament ◽  
X Ray Absorption

scholarly journals Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

PLoS ONE ◽  
2021 ◽  
Vol 16 (10) ◽  
pp. e0259216
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Experimental Methodology ◽  
Si Substrate ◽  
X Ray ◽  
Silicon Nitride Films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.

Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition

2011 ◽  
Vol 306-307 ◽  
pp. 167-170
Author(s):  
Yu Li Tu ◽  
Yan Hao Huang ◽  
Ling Min Kong ◽  
Kung Yen Lee ◽  
Ling Yun Jang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Peak Frequency ◽  
Atomic Scale ◽  
X Ray ◽  
Physical And Chemical ◽  
X Ray Absorption ◽  
Sic Films

Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as intensity, width, peak frequency and polarization provide fruitful information on the crystal quality and properties of these film materials.

Sign in / Sign up

Export Citation Format

Share Document