Real-time diagnostics of II–VI molecular beam epitaxy by spectral ellipsometry

1997 ◽  
Vol 15 (2) ◽  
pp. 216-222 ◽  
Author(s):  
W. M. Duncan ◽  
M. J. Bevan ◽  
H. D. Shih
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Spectral Ellipsometry

Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

2002 ◽  
Vol 81 (15) ◽  
pp. 2863-2865 ◽  
Author(s):  
S. Martini ◽  
A. A. Quivy ◽  
E. C. F. da Silva ◽  
J. R. Leite
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Time Determination

scholarly journals Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

APL Materials ◽  
2014 ◽  
Vol 2 (3) ◽  
pp. 032107 ◽  
Author(s):  
A. Lastras-Martínez ◽  
J. Ortega-Gallegos ◽  
L. E. Guevara-Macías ◽  
O. Nuñez-Olvera ◽  
R. E. Balderas-Navarro ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Homoepitaxial Growth ◽  
Reflectance Difference Spectroscopy

Optical Approaches to Real-Time Analysis and Control of Crystal Growth

1990 ◽  
Vol 198 ◽  
Author(s):  
D. E. Aspnes
Keyword(s):  
Chemical Vapor Deposition ◽  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Chemical Vapor ◽  
Optical Methods ◽  
Dielectric Anisotropy

ABSTRACTA variety of optical methods are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organometallic chemical vapor deposition (OMCVD), and related techniques. Spectroellipsometry (SE) and spectroreflectometry (SR), the older, primarily bulk-sensitive probes, are now augmented by new, primarily surface-sensitive probes such as reflectance-difference spectroscopy (RDS), second-harmonic generation (SHG), and laser light scattering (LLS). Examples of real-time growth studies now include SE determinations of thicknesses and compositions of AlxGa1–xAs layers on GaAs by organometallic molecular beam epitaxy (OMMBE) to 10 Å thickness scales, RDS determinations of surface dielectric anisotropy spectra of various (001) GaAs surfaces relevant to crystal growth by MBE, and LLS determinations of the evolution of surface roughness during chemical vapor deposition (CVD) growth on Si. Proven capabilities suggest new applications, particularly to growth-interrupted and metastable systems.

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

2012 ◽  
Vol 45 (5) ◽  
pp. 1046-1053 ◽  
Author(s):  
Wen Hu ◽  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Miwa Kozu ◽  
Masamitu Takahasi
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Relaxation Process ◽  
Real Time ◽  
High Speed ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. To demonstrate the feasibility of this rapid mapping technique, the 022 asymmetric diffraction of an InGaAs/GaAs(001) thin film grown by molecular beam epitaxy was measured and the procedure for data calibration was examined. Subsequently, the proposed method was applied to real-time monitoring of the strain relaxation process during the growth of a thin-film heterostructure consisting of In0.07Ga0.93As and In0.18Ga0.82As layers consecutively deposited on GaAs(001). The time resolution of the measurement was 10 s. It was revealed that additional relaxation of the first In0.07Ga0.93As layer was induced by the growth of the second In0.18Ga0.82As layer within a short period of time corresponding to the deposition of only two monolayers of InGaAs.

In Situ Spectroscopic Ellipsometry for Real Time Composition Control of Hg1−xcdx Te Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 487 ◽  
Author(s):  
R. Dat ◽  
F. Aqariden ◽  
W. M. Duncan ◽  
D. Chandra ◽  
H. D. Shih
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Surface Topography ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam ◽  
Surface Defects ◽  
Spectral Ellipsometry ◽  
Composition Control ◽  
The Impact

AbstractSpectral ellipsometry (SE) was applied to in situ composition control of Hg1−xCdxTe grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg1−xCdxTe layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE- Hg1−xCdx.Te layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE- Hg1−xCdxTe samples having the same composition, but different void densities, have different effective dielectric functions.

Sign in / Sign up

Export Citation Format

Share Document