Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H2SiF6) solution

1997 ◽  
Vol 15 (2) ◽  
pp. 369-373 ◽  
Author(s):  
Ming-Jer Jeng ◽  
Jenn-Gwo Hwu
Keyword(s):  
Low Temperature ◽  
Anodic Oxidation ◽  
Fluorinated Oxides

Low temperature formation of insulating layers on silicides by anodic oxidation

1987 ◽  
Vol 30 (9) ◽  
pp. 947-951 ◽  
Author(s):  
W.J. Strydom ◽  
J.C. Lombaard ◽  
R. Pretorius
Keyword(s):  
Low Temperature ◽  
Anodic Oxidation

scholarly journals Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Akarapu Ashok ◽  
Prem Pal
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Anodic Oxidation ◽  
Room Temperature ◽  
Microelectromechanical Systems ◽  
Oxide Films ◽  
Mechanical Stirring

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

Low-temperature anodic oxidation of silicon using a wave resonance plasma source

1999 ◽  
Vol 75 (5) ◽  
pp. 725-727 ◽  
Author(s):  
S. Uchikoga ◽  
D. F. Lai ◽  
J. Robertson ◽  
W. I. Milne ◽  
N. Hatzopoulos ◽  
...  
Keyword(s):  
Low Temperature ◽  
Anodic Oxidation ◽  
Plasma Source ◽  
Wave Resonance ◽  
Resonance Plasma

One-step preparation of C-doped TiO2 nanotubes with enhanced photocatalytic activity by water-assisted method

CrystEngComm ◽  
2021 ◽  
Author(s):  
Xiaojiang Nie ◽  
junkun Wang ◽  
Wenchao Duan ◽  
zilong zhao ◽  
Liang Li ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Low Temperature ◽  
Anodic Oxidation ◽  
Crystalline Phase ◽  
Tio2 Nanotubes ◽  
Doped Tio2 ◽  
X Ray ◽  
One Step ◽  
Amorphous Tio2

The crystallization of amorphous TiO2 nanotubes which prepared by anodic oxidation was crystallized by water-assisted at low temperature. The crystalline phase and morphology of TiO2 nanotubes were observed by X-ray...

Resistance Switching in Metal Oxide Thin Films and its Memory Application

2013 ◽  
Vol 346 ◽  
pp. 29-34 ◽  
Author(s):  
Tatyana Kundozerova ◽  
Genrikch Stefanovich
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Anodic Oxidation ◽  
Nonvolatile Memory ◽  
Pulsed Laser ◽  
Resistance Switching ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Process Memory

We explore the unipolar resistance switching effect in sandwich structures based on Nb, Ta and Zr oxide thin films. The structures were fabricated by pulsed laser deposition and low temperature anodic oxidation methods. After electroforming process memory cells demonstrate reproducible switching between low and high resistance states with a resistance ratio around 102. Nonvolatile resistance storage was traced within 40 days. The low-temperature anodic oxidation of Nb was found to be suitable to fabricate flexible nonvolatile memory elements. The parameters of resistive switching are not degraded after 100000 flexing.

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