Effect of ion bombardment in very-high frequency glow discharge on growth and properties of SiHx films

1997 ◽  
Vol 15 (2) ◽  
pp. 298-306 ◽  
Author(s):  
A. I. Kosarev ◽  
A. S. Smirnov ◽  
A. S. Abramov ◽  
A. J. Vinogradov ◽  
A. Yu. Ustavschikov ◽  
...  
Keyword(s):  
Glow Discharge ◽  
High Frequency ◽  
Ion Bombardment ◽  
Very High Frequency ◽  
Very High

Analysis of Plasma Properties and Deposition of Amorphous Silicon Alloy Solar Cells Using Very High Frequency Glow Discharge

1999 ◽  
Vol 557 ◽  
Author(s):  
B. Yan ◽  
J. Yang ◽  
S. Guha ◽  
A. Gallagher
Keyword(s):  
Solar Cells ◽  
High Frequency ◽  
Lower Energy ◽  
Ionic Current ◽  
Ion Bombardment ◽  
Half Width ◽  
Rf Plasma ◽  
Very High Frequency ◽  
Very High ◽  
Ionic Energy

AbstractPositive ionic energy distributions in modified very-high-frequency (MVHF) and radio frequency (RF) glow discharges were measured using a retarding field analyzer. The ionic energy distribution for H2 plasma with 75 MHz excitation at a pressure of 0.1 torr has a peak at 22 eV with a half-width of about 6 eV. However, with 13.56 MHz excitation, the peak appears at 37 eV with a much broader half-width of 18 eV. The introduction of SiH4 to the plasma shifts the distribution to lower energy. Increasing the pressure not only shifts the distribution to lower energy but also broadens the distribution. In addition, the ionic current intensity to the substrate is about five times higher for MVHF plasma than for RF plasma. In order to study the effect of ion bombardment, the deposition of a-Si alloy solar cells using MVHF was investigated in detail at different pressures and external biases. Lowering the pressure and negatively biasing the substrate increases ion bombardment energy and results in a deterioration of cell performance. It indicates that ion bombardment is not beneficial for making solar cells using MVHF. By optimizing the deposition conditions, a 10.8% initial efficiency of a-Si/a-SiGe/SiGe triple-junction solar cell was achieved at a deposition rate of 0.6 nm/sec.

High Rate Deposition of Amorphous Silicon Based Solar Cells using Modified Very High Frequency Glow Discharge

2007 ◽  
Vol 989 ◽  
Author(s):  
Guozhen Yue ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Cell Performance ◽  
High Rate ◽  
Active Area ◽  
Very High Frequency ◽  
Single Junction ◽  
Very High

AbstractWe report our recent progress on high rate deposition of hydrogenated amorphous silicon (a-Si:H) and silicon germanium (a-SiGe:H) based n-i-p solar cells. The intrinsic a-Si:H and a-SiGe:H layers were deposited using modified very high frequency (MVHF) glow discharge. We found that both the initial cell performance and stability of the MVHF a-Si:H single-junction cells are independent of the deposition rate up to 15 Å/s. The average initial and stable active-area cell efficiencies of 10.0% and 8.5%, respectively, were obtained for the cells on textured Ag/ZnO coated stainless steel substrates. a-SiGe:H single-junction cells were also optimized at a rate of ~10 Å/s. The cell performance is similar to those made using conventional radio frequency technique at 3 Å/s. By combining the optimized component cells made at 10 Å/s, an a-Si:H/a-SiGe:H double-junction solar cell with an initial active-area efficiency of 11.7% was achieved.

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