scholarly journals Evolution of the microstructure in microcrystalline silicon prepared by very high frequency glow-discharge using hydrogen dilution

2000 ◽  
Vol 87 (6) ◽  
pp. 3137-3142 ◽  
Author(s):  
E. Vallat-Sauvain ◽  
U. Kroll ◽  
J. Meier ◽  
A. Shah ◽  
J. Pohl
Keyword(s):  
Glow Discharge ◽  
High Frequency ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Hydrogen Dilution ◽  
Very High

Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge

1994 ◽  
Vol 65 (20) ◽  
pp. 2588-2590 ◽  
Author(s):  
F. Finger ◽  
P. Hapke ◽  
M. Luysberg ◽  
R. Carius ◽  
H. Wagner ◽  
...  
Keyword(s):  
Grain Size ◽  
Glow Discharge ◽  
Deposition Rate ◽  
High Frequency ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Very High

Origin and Incorporation Mechanism for Oxygen Contaminants in a-Si:H and μc-Si:H Films Prepared by the Very High Frequency (70 MHz) Glow Discharge Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
U. Kroll ◽  
J. Meier ◽  
H. Keppner ◽  
S. D. Littlewood ◽  
I. E. Kelly ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Oxygen Concentration ◽  
High Frequency ◽  
Secondary Ion Mass Spectrometry ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Oxygen Incorporation ◽  
Outgassing Rate ◽  
Secondary Ion ◽  
Very High

ABSTRACTThe effect of plasma power, reactor outgassing rate and feed gas purity on the oxygen content of amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) layers, prepared by the VHF (70 MHz) glow discharge technique has been investigated. The oxygen concentration in the films was measured by Secondary Ion Mass Spectrometry. The gas purity could be optionally enhanced by the application of a getter-based gas purifier mounted in the gas pipe just before the reactor. The purifier reduces the oxygen contaminants in the feed gas to levels in the ppb range. It was found that oxygen incorporation was enhanced at lower deposition rates. The deposition rate dependence of the oxygen incorporation is in excellent agreement with the proposed incorporation mechanism. Furthermore, the reactor outgassing rate and the purity of the feed gas itself were identified as the main contamination sources for the oxygen contaminants in the deposited a-Si:H films as well as in μc-Si:H films : e.g. at outgassing rates in the range of 10−6 mbar 1 s−1, at least around half of the oxygen detected in both a-Si:H and in the μc-Si:H layers originates from the feed gas if the latter is unpurified. By combining reduced outgassing rates and the use of purified feed gas, a-Si:H and μc-Si:H films with an oxygen concentration of 5×1017cm−3 and 2×1018cm−3, respectively, were deposited. These values both represent the lowest concentrations of oxygen contaminants reported to date for these kinds of materials.

Microcrystalline Silicon Solar Cell Deposited Using Modified Very-High-Frequency Glow Discharge and Its Application in Multi-junction Structures

2004 ◽  
Vol 808 ◽  
Author(s):  
Guozhen Yue ◽  
Baojie Yan ◽  
Jessica M. Owens ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Triple Junction ◽  
High Frequency ◽  
Active Area ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Bottom Cell ◽  
Junction Structure ◽  
Very High

ABSTRACTWe have used the modified very-high-frequency glow discharge technique to deposit hydrogenated microcrystalline silicon (m c-Si:H) solar cells at high rates for use as the bottom cell in a multi-junction structure. We have investigated c-Si:H single-junction, a-Si:H/ c-Si:H double-junction, and a-Si:H/a-SiGe:H/m c-Si:H triple-junction solar cells and achieved initial active area efficiencies of 7.7%, 12.5%, and 12.4%, respectively. Issues related to improving material properties and device structures are addressed. By taking advantage of a lower degradation in m c-Si:H than a-Si:H and a-SiGe:H alloys, we have minimized the light induced effect in multi-junction structures by designing a bottom-cell-limited current mismatching. As a result, we have obtained a stable active-area cell efficiency of 11.2% with an a-Si:H/a-SiGe:H/μ c-Si:H triple-junction structure.

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