scholarly journals Origins of atmospheric contamination in amorphous silicon prepared by very high frequency (70 MHz) glow discharge

1995 ◽  
Vol 13 (6) ◽  
pp. 2742-2746 ◽  
Author(s):  
U. Kroll ◽  
J. Meier ◽  
H. Keppner ◽  
A. Shah ◽  
S. D. Littlewood ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Very High Frequency ◽  
Atmospheric Contamination ◽  
Very High

High Rate Deposition of Amorphous Silicon Based Solar Cells using Modified Very High Frequency Glow Discharge

2007 ◽  
Vol 989 ◽  
Author(s):  
Guozhen Yue ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Cell Performance ◽  
High Rate ◽  
Active Area ◽  
Very High Frequency ◽  
Single Junction ◽  
Very High

AbstractWe report our recent progress on high rate deposition of hydrogenated amorphous silicon (a-Si:H) and silicon germanium (a-SiGe:H) based n-i-p solar cells. The intrinsic a-Si:H and a-SiGe:H layers were deposited using modified very high frequency (MVHF) glow discharge. We found that both the initial cell performance and stability of the MVHF a-Si:H single-junction cells are independent of the deposition rate up to 15 Å/s. The average initial and stable active-area cell efficiencies of 10.0% and 8.5%, respectively, were obtained for the cells on textured Ag/ZnO coated stainless steel substrates. a-SiGe:H single-junction cells were also optimized at a rate of ~10 Å/s. The cell performance is similar to those made using conventional radio frequency technique at 3 Å/s. By combining the optimized component cells made at 10 Å/s, an a-Si:H/a-SiGe:H double-junction solar cell with an initial active-area efficiency of 11.7% was achieved.

Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Baojie Yana ◽  
Jeffrey Yanga ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Room Temperature ◽  
Defect Density ◽  
Very High Frequency ◽  
Solar Cell Performance ◽  
Kinetics Of ◽  
Very High

ABSTRACTA systematic study has been made of the annealing kinetics of amorphous silicon (a-Si) alloy solar cells. The cells were deposited at various rates using H2 dilution with radio frequency (RF) and modified very high frequency (MVHF) glow discharge. In order to minimize the effect of annealing during light soaking, the solar cells were degraded under 30 suns at room temperature to quickly reach their saturated states. The samples were then annealed at an elevated temperature. The J-V characteristics were recorded as a function of annealing time. The correlation of solar cell performance and defect density in the intrinsic layer was obtained by computer simulation. Finally, the annealing activation energy distribution (Ea) was deduced by fitting the experimental data to a theoretical model. The results show that the RF low rate solar cell with high H2 dilution has the lowest Ea and the narrowest distribution, while the RF cell with no H2 dilution has the highest Ea and the broadest distribution. The MVHF cell made at 8Å/s withhigh H2 dilution shows a lower Ea and a narrower distribution than the RF cell made at 3 Å/s, despite the higher rate. We conclude that different annealing kinetics plays an important role in determining the stabilized performance of a-Si alloy solar cells.

Rapid Recrystallization of Amorphous Silicon Utilizing Very-High-Frequency Microplasma Jet at Atmospheric Pressure

2006 ◽  
Vol 45 (10B) ◽  
pp. 8484-8487 ◽  
Author(s):  
Mina Ryo ◽  
Yusuke Sakurai ◽  
Tomohiro Kobayashi ◽  
Hajime Shirai
Keyword(s):  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
High Frequency ◽  
Very High Frequency ◽  
Very High

Effect of ion bombardment in very-high frequency glow discharge on growth and properties of SiHx films

1997 ◽  
Vol 15 (2) ◽  
pp. 298-306 ◽  
Author(s):  
A. I. Kosarev ◽  
A. S. Smirnov ◽  
A. S. Abramov ◽  
A. J. Vinogradov ◽  
A. Yu. Ustavschikov ◽  
...  
Keyword(s):  
Glow Discharge ◽  
High Frequency ◽  
Ion Bombardment ◽  
Very High Frequency ◽  
Very High
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