Neon ion beam‐induced surface reactions of SF6 adsorbed molecules with silicon at low temperature

1996 ◽  
Vol 14 (1) ◽  
pp. 234-239 ◽  
Author(s):  
J. Royer ◽  
P. Y. Tessier ◽  
B. Grolleau ◽  
G. Turban
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Surface Reactions ◽  
Adsorbed Molecules ◽  
Neon Ion

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Chemical Displacement of Molecules Adsorbed on Copper Surfaces:  Low-Temperature Studies with Applications to Surface Reactions

1997 ◽  
Vol 101 (40) ◽  
pp. 7908-7918 ◽  
Author(s):  
P. W. Kash ◽  
M. X. Yang ◽  
A. V. Teplyakov ◽  
G. W. Flynn ◽  
B. E. Bent
Keyword(s):  
Low Temperature ◽  
Surface Reactions ◽  
Copper Surfaces

Focused Helium and Neon Ion Beam Modification of High-T C Superconductors and Magnetic Materials

2016 ◽  
pp. 415-445 ◽  
Author(s):  
Shane A. Cybart ◽  
Rantej Bali ◽  
Gregor Hlawacek ◽  
Falk Röder ◽  
Jürgen Fassbender
Keyword(s):  
Magnetic Materials ◽  
Ion Beam ◽  
Ion Beam Modification ◽  
Neon Ion

Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Ion Beam Deposition ◽  
Epitaxial Deposition ◽  
Ion Damage ◽  
Low Temperature Epitaxy ◽  
Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

1993 ◽  
Vol 316 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Stefan Winter ◽  
Shinji Kimura ◽  
Yushin Tsai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Ion Beams ◽  
Beam Current Density ◽  
Molecular Beam Epitaxy Growth ◽  
Spectral Evolution ◽  
Activation Rate

ABSTRACTC-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC+) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC+ for EC+ lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC+. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC+=170 eV. For EC+ higher than ~170 eV, increasing EC+ was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC+.

Human Cell Survival as a Function of Depth for a High-Energy Neon Ion Beam

1976 ◽  
Vol 65 (1) ◽  
pp. 191 ◽  
Author(s):  
M. R. Raju ◽  
E. Blakely ◽  
J. Howard ◽  
J. T. Lyman ◽  
D. P. Kalofonos ◽  
...  
Keyword(s):  
Cell Survival ◽  
Human Cell ◽  
Ion Beam ◽  
High Energy ◽  
Neon Ion

Low temperature ion beam irradiation of gallium films

1982 ◽  
Vol 47 (3) ◽  
pp. 227-232 ◽  
Author(s):  
U. G�rlach ◽  
M. Hitzfeld ◽  
P. Ziemann ◽  
W. Buckel
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation
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