Quantitative analysis of borophosphosilicate glass films on silicon using infrared external reflection–absorption spectroscopy

1995 ◽  
Vol 13 (4) ◽  
pp. 1959-1966 ◽  
Author(s):  
James E. Franke ◽  
Lizhong Zhang ◽  
Thomas M. Niemczyk ◽  
David M. Haaland ◽  
Kenneth J. Radigan
2017 ◽  
Vol 110 (9) ◽  
pp. 093902 ◽  
Author(s):  
Zengqing Zhuo ◽  
Paul. Olalde-Velasco ◽  
Timothy Chin ◽  
Vincent Battaglia ◽  
Stephen J. Harris ◽  
...  

1994 ◽  
Vol 65 (10) ◽  
pp. 1236-1238 ◽  
Author(s):  
R. Ossikovski ◽  
N. Blayo ◽  
B. Drévillon ◽  
M. Firon ◽  
B. Delahaye ◽  
...  

1992 ◽  
Vol 284 ◽  
Author(s):  
Laurent Ventura ◽  
Bouchaíb Hartiti ◽  
Abdelilah Slaoui ◽  
Jean-Claude Muller ◽  
Paul Siffert

ABSTRACTRapid thermal annealing is investigated for curing spin-on glass insulating films. The annealed SOG films were mainly evaluated using infrared absorption spectroscopy and by electrical measurement of the defects present at the Si/Sio2 interface. We found in particular after rapid thermal annealing an important densification of the layers as a function of temperature and a reduction of the interfacial state densities which are comparable to classical thermal oxides.


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