Rapid Thermal Annealing of Spin-On Glass Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Laurent Ventura ◽  
Bouchaíb Hartiti ◽  
Abdelilah Slaoui ◽  
Jean-Claude Muller ◽  
Paul Siffert
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Electrical Measurement ◽  
Infrared Absorption Spectroscopy ◽  
Insulating Films ◽  
State Densities ◽  
Interfacial State ◽  
Glass Films

ABSTRACTRapid thermal annealing is investigated for curing spin-on glass insulating films. The annealed SOG films were mainly evaluated using infrared absorption spectroscopy and by electrical measurement of the defects present at the Si/Sio2 interface. We found in particular after rapid thermal annealing an important densification of the layers as a function of temperature and a reduction of the interfacial state densities which are comparable to classical thermal oxides.

Rapid Isothermal Annealing of Doped and Undoped Spin-on Glass Films

1995 ◽  
Vol 387 ◽  
Author(s):  
A. Slaoui ◽  
L. Ventura ◽  
A. Lachiq ◽  
R. Monna ◽  
J. C. Muller
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Oxygen Deficiency ◽  
Oxide Films ◽  
Surface Concentration ◽  
Processing Parameters ◽  
Interface State ◽  
Optical Measurements ◽  
State Densities ◽  
Glass Films

AbstractThe rapid thermal annealing of doped (SOD) and undoped (SOG) glass films spinned onto silicon from diluted or undiluted solutions has been investigated. The dilution performed by methanol has allowed to obtain oxide films as thin as 10 nm.The optical measurements of annealed SOG films have shown that good oxide films without oxygen deficiency are achievable. The electrical characteristics of Al-gate capacitors assessed by Capacitance-voltage measurements have shown a great dependence of the water content in the range of 600–850°C before reaching a typical dielectric constant value near 3.8 at higher temperatures. Low Interface state densities values obtained at temperature up to 900°C confirm the curing effect of a rapid thermal annealing.On the other hand, we have demonstrated that the efficiency of rapid thermal diffusion from boron or phosphorus SOD films deposited on Si wafers depends on the source composition and its thickness. In particular, we have shown that it is possible to control the junction depth, the surface concentration and the minority-carrier diffusion length by varying the amount of dopant concentration in the solution, the thickness of the doped oxide film and the rapid thermal processing parameters. Futhermore, the remaining doped SOG film can play the role of an efficient oxide passivation layer.

High Resolution Infrared Absorption Spectroscopy of C60 Molecules and Clusters in Parahydrogen Solids

1999 ◽  
Author(s):  
Simon Tam ◽  
Michelle E. DeRose ◽  
Mario E. Fajardo ◽  
Norihito Sogoshi ◽  
Yoshiyasu Kato
Keyword(s):  
High Resolution ◽  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Infrared Absorption Spectroscopy

scholarly journals Author Correction: Absolute 13C/12C isotope amount ratio for Vienna PeeDee Belemnite from infrared absorption spectroscopy

2021 ◽  
Author(s):  
Adam J. Fleisher ◽  
Hongming Yi ◽  
Abneesh Srivastava ◽  
Oleg L. Polyansky ◽  
Nikolai F. Zobov ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Infrared Absorption Spectroscopy ◽  
Isotope Amount Ratio
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