High quality, high deposition rate SiO2 films at low temperatures using silicon fluorides and plasma assisted deposition techniques

1993 ◽  
Vol 11 (6) ◽  
pp. 2945-2949 ◽  
Author(s):  
C. Falcony ◽  
J. C. Alonso ◽  
A. Ortiz ◽  
M. Garcia ◽  
E. P. Zironi ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Low Temperatures ◽  
High Deposition Rate ◽  
High Quality ◽  
Sio2 Films ◽  
Deposition Techniques

High-quality and low-temperature epitaxial Si films deposited at very high deposition rate

2001 ◽  
Vol 225 (2-4) ◽  
pp. 335-339 ◽  
Author(s):  
Ralf B. Bergmann ◽  
Lars Oberbeck ◽  
Thomas A. Wagner
Keyword(s):  
Low Temperature ◽  
Deposition Rate ◽  
High Deposition Rate ◽  
High Quality ◽  
Si Films ◽  
Very High

Electronic transport study of high deposition rate HWCVD a-Si:H by the microwavephotomixing technique

2001 ◽  
Vol 664 ◽  
Author(s):  
S.R. Sheng ◽  
R. Braunstein ◽  
B.P. Nelson ◽  
Y. Xu
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Flow Rate ◽  
Electronic Transport ◽  
High Deposition Rate ◽  
Deposition Pressure ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Potential Fluctuations

ABSTRACTThe electronic transport properties of high deposition rate a-Si:H films prepared by HWCVD have been investigated in detail by employing the microwave photomixing technique. The high deposition rates (up to 1 µm/min.) were achieved by adding a second filament, increasing deposition pressure, silane flow rate, and decreasing filament-to-substrate distance. The effect of the deposition rate on the resultant film properties with respect to the substrate temperature, deposition pressure and silane flow rate was studied. It was found that the film transport properties do not change monotonically with increasing deposition rate. The photoconductivity peaks at ∼70-90 Å/s, where both the drift mobility and lifetime peak, consistent with the deposition rate dependence of the range and depth of the potential fluctuations. High quality, such as a photoconductivity-to-dark-conductivity ratio of ∼105 and nearly constant low charged defect density, can be maintained at deposition rates up to ∼150 Å/s, beyond which the film properties deteriorate rapidly as a result of an enhanced effect of the long-range potential fluctuations due to a considerable increase in the concentration of the charged defects. Our present results indicate that medium silane flow rate, low pressure, and higher substrate temperature are generally required to maintain high quality films at high deposition rates.

Deposition of High Quality SiO2 Films Using Teos by ECR Plasma

1995 ◽  
Vol 396 ◽  
Author(s):  
K. Sano ◽  
H. Tamamaki ◽  
M. Nomura ◽  
S. Wickramanayaka ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Sio2 Films ◽  
Silicon Source ◽  
Ecr Plasma

AbstractSiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Parameter Optimization of High Deposition Rate Laser Cladding Based on the Response Surface Method and Genetic Neural Network Model

2021 ◽  
Vol 48 (6) ◽  
pp. 0602112
Author(s):  
庞祎帆 Pang Yifan ◽  
傅戈雁 Fu Geyan ◽  
王明雨 Wang Mingyu ◽  
龚燕琪 Gong Yanqi ◽  
余司琪 Yu Siqi ◽  
...  
Keyword(s):  
Neural Network ◽  
Response Surface ◽  
Response Surface Method ◽  
Deposition Rate ◽  
Network Model ◽  
Parameter Optimization ◽  
Neural Network Model ◽  
High Deposition Rate ◽  
Surface Method ◽  
Genetic Neural Network
Sign in / Sign up

Export Citation Format

Share Document