The effect of substrate temperature and bias on the stress, chemical etch rate, and microstructure of high deposition rate sputtered SiO2 films

1991 ◽  
Vol 9 (4) ◽  
pp. 2302-2308 ◽  
Author(s):  
C. V. Macchioni
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Etch Rate ◽  
High Deposition Rate ◽  
Sio2 Films ◽  
Chemical Etch

Electronic transport study of high deposition rate HWCVD a-Si:H by the microwavephotomixing technique

2001 ◽  
Vol 664 ◽  
Author(s):  
S.R. Sheng ◽  
R. Braunstein ◽  
B.P. Nelson ◽  
Y. Xu
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Flow Rate ◽  
Electronic Transport ◽  
High Deposition Rate ◽  
Deposition Pressure ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Potential Fluctuations

ABSTRACTThe electronic transport properties of high deposition rate a-Si:H films prepared by HWCVD have been investigated in detail by employing the microwave photomixing technique. The high deposition rates (up to 1 µm/min.) were achieved by adding a second filament, increasing deposition pressure, silane flow rate, and decreasing filament-to-substrate distance. The effect of the deposition rate on the resultant film properties with respect to the substrate temperature, deposition pressure and silane flow rate was studied. It was found that the film transport properties do not change monotonically with increasing deposition rate. The photoconductivity peaks at ∼70-90 Å/s, where both the drift mobility and lifetime peak, consistent with the deposition rate dependence of the range and depth of the potential fluctuations. High quality, such as a photoconductivity-to-dark-conductivity ratio of ∼105 and nearly constant low charged defect density, can be maintained at deposition rates up to ∼150 Å/s, beyond which the film properties deteriorate rapidly as a result of an enhanced effect of the long-range potential fluctuations due to a considerable increase in the concentration of the charged defects. Our present results indicate that medium silane flow rate, low pressure, and higher substrate temperature are generally required to maintain high quality films at high deposition rates.

Influence of Substrate Temperature and Bias Voltage on Structure and Mechanical Properties of CrN Coatings

2013 ◽  
Vol 591 ◽  
pp. 99-103 ◽  
Author(s):  
Hao Zhang ◽  
Shu Wang Duo ◽  
Xiang Min Xu ◽  
Huan Ke ◽  
Ting Zhi Liu ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Bias Voltage ◽  
High Deposition Rate ◽  
Properties Of Coatings ◽  
Unbalanced Magnetron ◽  
Magnetron Sputter ◽  
Influence Of Substrate ◽  
Crn Coatings

CrN coatings have been deposited successfully by Closed Filed Unbalanced Magnetron Sputter Ion Plating (CFUMSIP). The effect of substrate temperature (TS) and bias voltage (VB) together on microstructure, morphologies and mechanical properties of CrN coatings were studied. The results showed that the deposition rate of CrN coatings declines with the increase of VB Under both room temperature (R.M.) and 300°C. The FCC-CrN disappeared gradually and orth-CrN arised with the increase of VB, and the TS promoted the transformation from FCC - CrN to orth - CrN. The surface morphology of CrN coatings with changed VBs was greatly different, and VB could further improve the mechanical properties of coatings. In this paper, the CrN coating with the parameters (TS =300°C, VB =-30V) had relatively high deposition rate and mechanical properties.

Deposition of High Quality SiO2 Films Using Teos by ECR Plasma

1995 ◽  
Vol 396 ◽  
Author(s):  
K. Sano ◽  
H. Tamamaki ◽  
M. Nomura ◽  
S. Wickramanayaka ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Sio2 Films ◽  
Silicon Source ◽  
Ecr Plasma

AbstractSiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.

Improved quality of high deposition rate a-Si:H films prepared at usual substrate temperature

1996 ◽  
Vol 198-200 ◽  
pp. 1063-1066 ◽  
Author(s):  
B. Alhallani ◽  
R. Tews ◽  
G. Suchaneck ◽  
S. Röhlecke ◽  
A. Kottwitz ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
High Deposition Rate
Sign in / Sign up

Export Citation Format

Share Document