Formation of device‐quality metal–insulator–semiconductor structures with oxide–nitride–oxide dielectrics by low‐temperature plasma‐assisted processing, combined with high‐temperature rapid thermal annealing

1993 ◽  
Vol 11 (4) ◽  
pp. 952-958 ◽  
Author(s):  
Y. Ma ◽  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Rapid Thermal Annealing ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Metal Insulator ◽  
Semiconductor Structures ◽  
Temperature Rapid Thermal Annealing ◽  
Nitride Oxide ◽  
Quality Metal

Resource Saving Technology for Plasma Treatment of Molybdenum Ore Tailings

2014 ◽  
Vol 682 ◽  
pp. 515-518 ◽  
Author(s):  
Oleg G. Volokitin ◽  
Nelli K. Skripnikova ◽  
Valentin V. Shekhovtsov
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Raw Materials ◽  
Silicate Melts ◽  
Low Temperature Plasma ◽  
Resource Saving ◽  
Temperature Plasma ◽  
Mineral Fibers

In the production of mineral fibers it is possible to synthesize high-temperature silicate melts from molybdenum ore tailings using low-temperature plasma. Physicochemical research was carried out in relation to raw materials and melt products.

Plasma Technology of Silicate Melts Obtaining in Mineral Fibers Production

2014 ◽  
Vol 880 ◽  
pp. 233-236 ◽  
Author(s):  
Oleg G. Volokitin ◽  
Valentin V. Shekhovtsov ◽  
Evgenii A. Maslov
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Silicate Melts ◽  
Low Temperature Plasma ◽  
Plasma Technology ◽  
Temperature Plasma ◽  
Mineral Fibers ◽  
Plasma Energy

This article is devoted to research possibility of high-temperature silicate melts producing from feldspar wastes of molybdenum ores enrichment (Khakassia) with use of low-temperature plasma energy.

Electrical Properties of Oxide-Nitride-Oxide, Ono, Heterostructures Fabricated by Low Temperature Remote PECVD

1992 ◽  
Vol 284 ◽  
Author(s):  
Y. Ma ◽  
T. Yasuda ◽  
Y. L. Chen ◽  
G. Lucovsky ◽  
D. M. Maher
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Flat Band ◽  
Metal Insulator ◽  
Thermally Grown Oxides ◽  
Dielectric Interfaces ◽  
Nitride Oxide

ABSTRACTOxide-Nitride-Oxide, ONO, heterostructures, fabricated by low-temperature, 300°C, Remote Plasma Enhanced Chemical Vapor Deposition, have been used as gate dielectrics in metal insulator semiconductor devices. Analysis of C-V data for this devices indicates that higher levels of fixed charge are associated with the internal dielectric interfaces. A high-temperature, ̃900°C, Rapid Thermal Annealing, RTA, step has been inserted into the process sequence for fabricating ultra-thin, 4.7 nm SiO2 equivalent, device-quality ONO dielectric layers. The electrical properties of these ONO dielectrics, including the Si/SiO2 interfacial trap density, the flat band voltage, the charge to breakdown and the reliability under electron injection are comparable to those of high temperature, thermally-grown oxides.

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