Amorphous silicon alloys on c‐Si: Influence of substrate cleaning and ion bombardment on film adhesion and microstructure

1993 ◽  
Vol 11 (4) ◽  
pp. 1327-1331 ◽  
Author(s):  
S.‐Y. Yang ◽  
J. R. Abelson
Keyword(s):  
Amorphous Silicon ◽  
Ion Bombardment ◽  
Silicon Alloys ◽  
Film Adhesion ◽  
Influence Of Substrate ◽  
Substrate Cleaning

Dynamics of the creation of light-induced defects in amorphous silicon alloys

1986 ◽  
Vol 33 (4) ◽  
pp. 2512-2519 ◽  
Author(s):  
M. Hack ◽  
S. Guha ◽  
W. den Boer
Keyword(s):  
Amorphous Silicon ◽  
Silicon Alloys ◽  
The Creation ◽  
Induced Defects

scholarly journals Effect of argon ion bombardment on amorphous silicon carbonitride films

2014 ◽  
Vol 480 ◽  
pp. 012021
Author(s):  
R G S Batocki ◽  
R P Mota ◽  
R Y Honda ◽  
D C R Santos
Keyword(s):  
Amorphous Silicon ◽  
Ion Bombardment ◽  
Silicon Carbonitride ◽  
Argon Ion Bombardment ◽  
Argon Ion

Vibrational properties of amorphous silicon alloys

1981 ◽  
Vol 23 (10) ◽  
pp. 5263-5268 ◽  
Author(s):  
W. B. Pollard ◽  
J. D. Joannopoulos
Keyword(s):  
Amorphous Silicon ◽  
Vibrational Properties ◽  
Silicon Alloys

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

The Role of Charged Defects In Current Transport Through Hydrogenated Amorphous Silicon Alloys

1998 ◽  
Vol 507 ◽  
Author(s):  
S.P. Lau ◽  
J.M. Shannon ◽  
B.J. Sealy ◽  
J.M. Marshall
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Current Transport ◽  
Dangling Bond ◽  
Silicon Alloys ◽  
Metal Structures ◽  
Bond State ◽  
Donor States ◽  
Charged Defects

ABSTRACTCurrent transport in metal-semiconductor-metal structures based on amorphous silicon alloys has been studied in relation to the density of dangling bond state defects. The density of defects was changed by varying alloy composition or by current stressing. We show that the change of current-voltage characteristics and activation energy with defect density and the onset of Poole-Frenkel conduction with composition require charged defects. It is found that there are more charged defects in amorphous silicon nitride (a-Si1−xNx:H) than in amorphous silicon carbide (a-Si1−xCx:H). In addition, an excess of negatively charged dangling bond defects compared to positively charged dangling bond defects is observed in a-Si1−xNx:H films. This is attributed to the presence of N4+ act as the donor states in silicon nitride. We find that the density of charged dangling bond defects can be higher than 1019cm−3.

Ion Bombardment and Disorder in Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
L. S. Sidhu ◽  
F. Gaspari ◽  
S. Zukotynski
Keyword(s):  
Amorphous Silicon ◽  
Ion Bombardment ◽  
Film Structure ◽  
Structural And Optical Properties ◽  
Lower Growth ◽  
Optical Gap ◽  
Amorphous Network ◽  
Band Position ◽  
Transverse Optic ◽  
Biased Samples

ABSTRACTThe effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects.

Sign in / Sign up

Export Citation Format

Share Document