scholarly journals Effect of step edge transition rates and anisotropy in simulations of epitaxial growth

1991 ◽  
Vol 9 (3) ◽  
pp. 1545-1550 ◽  
Author(s):  
E. Chason ◽  
B. W. Dodson
Keyword(s):  
Epitaxial Growth ◽  
Step Edge ◽  
Transition Rates

Kinetic model for a step edge in epitaxial growth

1999 ◽  
Vol 59 (6) ◽  
pp. 6879-6887 ◽  
Author(s):  
Russel E. Caflisch ◽  
Weinan E ◽  
Mark F. Gyure ◽  
Barry Merriman ◽  
Christian Ratsch
Keyword(s):  
Kinetic Model ◽  
Epitaxial Growth ◽  
Step Edge

scholarly journals Effective transition rates for epitaxial growth using fast modulation

2004 ◽  
Vol 70 (4) ◽  
Author(s):  
Martha A. Gallivan ◽  
David G. Goodwin ◽  
Richard M. Murray
Keyword(s):  
Epitaxial Growth ◽  
Transition Rates

The Role of the Lattice Step in Epitaxial Growth

1999 ◽  
Vol 570 ◽  
Author(s):  
Tsu-Yi Fu ◽  
Tien T. Tsong
Keyword(s):  
Epitaxial Growth ◽  
Quantitative Information ◽  
Step Edge ◽  
Atomic Processes ◽  
Growth Modes ◽  
Diffusion Parameters ◽  
Temperature Ranges ◽  
Diffusion Paths ◽  
Field Ion Microscope

ABSTRACTSolid surfaces have many lattice steps. In epitaxy, aggregation of deposited atoms into islands or clusters during their diffusing can create many additional atomic steps. We study the effects of lattice steps on epitaxial growth in two aspects: 1. Movement of atoms across the step edge: a series of field ion microscope experiments reveal the importance of reflective and trapping properties of steps, and provide quantitative information that helps explain various growth modes observed in homoepitaxial growth. 2. Diffusion along the step edge: a number of field ion microscope experiments are done to determine diffusion parameters of a ledge atom along the step edge, and to derive the potential-energy diagram along different diffusion paths that helps explain the growth morphology. During growth, an atom undergoes a number of elementary atomic processes. Each process is characterized by a few energy parameters in bonding and diffusion. The integrated effect of all of these processes determines the growth process. We provide reliable experimental data and find the temperature ranges where various atomic processes are important

A simple model of epitaxial growth: the influence of step edge diffusion

1999 ◽  
Vol 121-122 ◽  
pp. 347-352 ◽  
Author(s):  
M. Biehl ◽  
M. Kinne ◽  
W. Kinzel ◽  
S. Schinzer
Keyword(s):  
Simple Model ◽  
Epitaxial Growth ◽  
Step Edge

Importance of the additional step-edge barrier in determining film morphology during epitaxial growth

1995 ◽  
Vol 51 (20) ◽  
pp. 14790-14793 ◽  
Author(s):  
J. A. Meyer ◽  
J. Vrijmoeth ◽  
H. A. van der Vegt ◽  
E. Vlieg ◽  
R. J. Behm
Keyword(s):  
Epitaxial Growth ◽  
Step Edge ◽  
Film Morphology ◽  
Additional Step

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

AEM of reaction-bonded SiC

1992 ◽  
Vol 50 (1) ◽  
pp. 344-345
Author(s):  
K Das Chowdhury ◽  
R. W. Carpenter ◽  
W. Braue
Keyword(s):  
Mechanical Properties ◽  
Phase Transformation ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Liquid Silicon ◽  
Structural Ceramic ◽  
Few Data

Research on reaction-bonded SiC (RBSiC) is aimed at developing a reliable structural ceramic with improved mechanical properties. The starting materials for RBSiC were Si,C and α-SiC powder. The formation of the complex microstructure of RBSiC involves (i) solution of carbon in liquid silicon, (ii) nucleation and epitaxial growth of secondary β-SiC on the original α-SiC grains followed by (iii) β>α-SiC phase transformation of newly formed SiC. Due to their coherent nature, epitaxial SiC/SiC interfaces are considered to be segregation-free and “strong” with respect to their effect on the mechanical properties of RBSiC. But the “weak” Si/SiC interface limits its use in high temperature situations. However, few data exist on the structure and chemistry of these interfaces. Microanalytical results obtained by parallel EELS and HREM imaging are reported here.

Sign in / Sign up

Export Citation Format

Share Document