Importance of the additional step-edge barrier in determining film morphology during epitaxial growth

1995 ◽  
Vol 51 (20) ◽  
pp. 14790-14793 ◽  
Author(s):  
J. A. Meyer ◽  
J. Vrijmoeth ◽  
H. A. van der Vegt ◽  
E. Vlieg ◽  
R. J. Behm
Keyword(s):  
Epitaxial Growth ◽  
Step Edge ◽  
Film Morphology ◽  
Additional Step

Prefactor and Step Edge Barrier Determination for Initerlayer Diffusion in Homoepitaxial Systems: Ag/Ag(111)

1998 ◽  
Vol 05 (03n04) ◽  
pp. 833-840 ◽  
Author(s):  
K. R. Roos ◽  
M. C. Tringides
Keyword(s):  
Experimental Methods ◽  
Step Edge ◽  
Additional Step ◽  
Step Density ◽  
Good Agreement

Interlayer diffusion is controlled by the probability that an atom will hop from a higher to a lower level. This probability depends on the additional step edge barrier ΔEs which an atom experiences at a step because of the lower coordination as it moves over the barrier, and possibly on the different prefactors νs, νt for an atom at the step versus one at a terrace position. It is important to develop experimental methods that separate out the two contributions. We have reanalyzed the STM-based method,1 which measures the fraction of islands with second layer occupation at different deposition temperatures, to show how the two contributions can be identified. In addition, we have developed a diffraction-based method that measures the step density of nucleated islands as they compete for atom capture with the steps at the perimeter of the terraces. RHEED experiments on Ag/Ag(111) result in ΔEs=0.15±0.03 eV and νs/νt=2.3×102±0.2, in good agreement with the results, ΔEs=0.13±0.03 eV and νs/νt=103±0.3, deduced from the data of Ref. 1.

Surface engineering of SrTiO3 (111) substrates for the epitaxial growth of BLT films

2004 ◽  
Vol 839 ◽  
Author(s):  
Ju Hyung Suh ◽  
Yong Seok Lee ◽  
Chan-Gyung Park
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Surface Engineering ◽  
Flat Surface ◽  
Growth Characteristics ◽  
Interfacial Structure ◽  
Film Morphology ◽  
Surface Termination ◽  
Etching Condition

ABSTRACTThe optimized surface termination of SrTiO3 (111) substrates was investigated and the effects of the terminated SrTiO3 (111) substrate on the growth characteristics of epitaxial Bi4−xLaxTi3O12 (BLT) films were evaluated. It was found that etching in buffered HF (BOE) solution for 2min provides a stable etching condition for SrTiO3 (111) substrates and that etching is an important factor for the formation of terrace structures. The microstructure of BLT films grown on the terminated substrate revealed a flat surface morphology and well-defined interfacial structure in comparison with BLT films grown on non-terminated substrate. Therefore, surface termination is a crucial factor for determining the quality of film morphology and interfacial structure.

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

2005 ◽  
Vol 483-485 ◽  
pp. 73-76 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Olof Kordina ◽  
Z. Shishkin ◽  
Shailaja P. Rao ◽  
R. Everly ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Hydrogen Chloride ◽  
Growth Rates ◽  
Growth Process ◽  
Cluster Formation ◽  
Film Morphology ◽  
Hydrogen Carrier ◽  
Low Crystalline

Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these experiments. It is proposed that the addition of HCl suppresses Si cluster formation in the gas phase, and possibly also preferentially etches material of low crystalline quality. The exact mechanism of the growth using an HCl additive is still under investigation, however, higher growth rates could be obtained and the surfaces were improved when HCl was added to the flow. The film morphology was studied using SEM and AFM and the quality with LTPL analysis, which are reported.

Kinetic model for a step edge in epitaxial growth

1999 ◽  
Vol 59 (6) ◽  
pp. 6879-6887 ◽  
Author(s):  
Russel E. Caflisch ◽  
Weinan E ◽  
Mark F. Gyure ◽  
Barry Merriman ◽  
Christian Ratsch
Keyword(s):  
Kinetic Model ◽  
Epitaxial Growth ◽  
Step Edge

Combinatorial Mapping of Substrate Step Edge Effects on Diblock Copolymer Thin Film Morphology and Orientation

2010 ◽  
Vol 31 (11) ◽  
pp. 1003-1009 ◽  
Author(s):  
Nathaniel T. Lawrence ◽  
Jill M. Kehoe ◽  
David B. Hoffman ◽  
Carolyn Marks ◽  
John M. Yarbrough ◽  
...  
Keyword(s):  
Thin Film ◽  
Edge Effects ◽  
Diblock Copolymer ◽  
Step Edge ◽  
Film Morphology

High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

2006 ◽  
Vol 527-529 ◽  
pp. 187-190 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Y. Shishkin ◽  
Olof Kordina ◽  
I. Haselbarth ◽  
Stephen E. Saddow
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Structural Quality ◽  
Growth Time ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth rates up to 32 μm/h. The growth rate was studied as a function of pressure, silane flow rate, and growth time. The structural quality of the films was determined by X-ray diffraction. A 65 μm thick epitaxial layer was grown at the 32 μm/h rate, resulting in a smooth, specular film morphology with occasional carrot-like and triangular defects. The film proved to be of high structural quality with an X-ray rocking curve FWHM value of the (0004) peak of 11 arcseconds.

The Role of the Lattice Step in Epitaxial Growth

1999 ◽  
Vol 570 ◽  
Author(s):  
Tsu-Yi Fu ◽  
Tien T. Tsong
Keyword(s):  
Epitaxial Growth ◽  
Quantitative Information ◽  
Step Edge ◽  
Atomic Processes ◽  
Growth Modes ◽  
Diffusion Parameters ◽  
Temperature Ranges ◽  
Diffusion Paths ◽  
Field Ion Microscope

ABSTRACTSolid surfaces have many lattice steps. In epitaxy, aggregation of deposited atoms into islands or clusters during their diffusing can create many additional atomic steps. We study the effects of lattice steps on epitaxial growth in two aspects: 1. Movement of atoms across the step edge: a series of field ion microscope experiments reveal the importance of reflective and trapping properties of steps, and provide quantitative information that helps explain various growth modes observed in homoepitaxial growth. 2. Diffusion along the step edge: a number of field ion microscope experiments are done to determine diffusion parameters of a ledge atom along the step edge, and to derive the potential-energy diagram along different diffusion paths that helps explain the growth morphology. During growth, an atom undergoes a number of elementary atomic processes. Each process is characterized by a few energy parameters in bonding and diffusion. The integrated effect of all of these processes determines the growth process. We provide reliable experimental data and find the temperature ranges where various atomic processes are important

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