Kinetic model for a step edge in epitaxial growth

1999 ◽  
Vol 59 (6) ◽  
pp. 6879-6887 ◽  
Author(s):  
Russel E. Caflisch ◽  
Weinan E ◽  
Mark F. Gyure ◽  
Barry Merriman ◽  
Christian Ratsch
Keyword(s):  
Kinetic Model ◽  
Epitaxial Growth ◽  
Step Edge

scholarly journals Anisotropic Step Stiffness from a Kinetic Model of Epitaxial Growth

2008 ◽  
Vol 7 (1) ◽  
pp. 242-273 ◽  
Author(s):  
Dionisios Margetis ◽  
Russel E. Caflisch
Keyword(s):  
Kinetic Model ◽  
Epitaxial Growth

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC

2008 ◽  
Vol 600-603 ◽  
pp. 135-138 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Patrick Fiorenza ◽  
Gaetano Izzo ◽  
Francesco La Via
Keyword(s):  
Growth Rate ◽  
Monte Carlo ◽  
Kinetic Model ◽  
Epitaxial Growth ◽  
Defect Formation ◽  
Monte Carlo Study ◽  
Optical Characterization ◽  
Extended Defects ◽  
Homoepitaxial Growth ◽  
Formation And Evolution

A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results.

scholarly journals Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique

2011 ◽  
Vol 158 (4) ◽  
pp. H457 ◽  
Author(s):  
M. Kolahdouz ◽  
L. Maresca ◽  
R. Ghandi ◽  
A. Khatibi ◽  
H. H. Radamson
Keyword(s):  
Kinetic Model ◽  
Epitaxial Growth ◽  
Selective Epitaxial Growth

The Role of the Lattice Step in Epitaxial Growth

1999 ◽  
Vol 570 ◽  
Author(s):  
Tsu-Yi Fu ◽  
Tien T. Tsong
Keyword(s):  
Epitaxial Growth ◽  
Quantitative Information ◽  
Step Edge ◽  
Atomic Processes ◽  
Growth Modes ◽  
Diffusion Parameters ◽  
Temperature Ranges ◽  
Diffusion Paths ◽  
Field Ion Microscope

ABSTRACTSolid surfaces have many lattice steps. In epitaxy, aggregation of deposited atoms into islands or clusters during their diffusing can create many additional atomic steps. We study the effects of lattice steps on epitaxial growth in two aspects: 1. Movement of atoms across the step edge: a series of field ion microscope experiments reveal the importance of reflective and trapping properties of steps, and provide quantitative information that helps explain various growth modes observed in homoepitaxial growth. 2. Diffusion along the step edge: a number of field ion microscope experiments are done to determine diffusion parameters of a ledge atom along the step edge, and to derive the potential-energy diagram along different diffusion paths that helps explain the growth morphology. During growth, an atom undergoes a number of elementary atomic processes. Each process is characterized by a few energy parameters in bonding and diffusion. The integrated effect of all of these processes determines the growth process. We provide reliable experimental data and find the temperature ranges where various atomic processes are important

A simple model of epitaxial growth: the influence of step edge diffusion

1999 ◽  
Vol 121-122 ◽  
pp. 347-352 ◽  
Author(s):  
M. Biehl ◽  
M. Kinne ◽  
W. Kinzel ◽  
S. Schinzer
Keyword(s):  
Simple Model ◽  
Epitaxial Growth ◽  
Step Edge
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