Stress and thermal expansion of boron‐doped silicon membranes on silicon substrates

1991 ◽  
Vol 9 (4) ◽  
pp. 2231-2234 ◽  
Author(s):  
B. S. Berry ◽  
W. C. Pritchet
Keyword(s):  
Thermal Expansion ◽  
Silicon Substrates ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Membranes

Heavily boron‐doped silicon membranes with enhanced mechanical properties for x‐ray mask substrate

1994 ◽  
Vol 65 (11) ◽  
pp. 1385-1387 ◽  
Author(s):  
Ho‐Jun Lee ◽  
Chul‐Hi Han ◽  
Choong‐Ki Kim
Keyword(s):  
Mechanical Properties ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Membranes

Misfit Dislocations in Bicrystals of Epitaxially Grown Silicon on Boron‐Doped Silicon Substrates

1969 ◽  
Vol 40 (8) ◽  
pp. 3089-3094 ◽  
Author(s):  
Yoshimitsu Sugita ◽  
Masao Tamura ◽  
Katsuro Sugawara
Keyword(s):  
Silicon Substrates ◽  
Misfit Dislocations ◽  
Boron Doped ◽  
Doped Silicon

New gettering using misfit dislocations in homoepitaxial wafers with heavily boron‐doped silicon substrates

1989 ◽  
Vol 54 (5) ◽  
pp. 463-465 ◽  
Author(s):  
H. Kikuchi ◽  
M. Kitakata ◽  
F. Toyokawa ◽  
M. Mikami
Keyword(s):  
Silicon Substrates ◽  
Misfit Dislocations ◽  
Boron Doped ◽  
Doped Silicon

Hydrogen Ion Implantation Caused Defect Structures in Heavily Doped Silicon Substrates

2005 ◽  
Vol 864 ◽  
Author(s):  
Minhua Li ◽  
Q. Wang
Keyword(s):  
Damage Zone ◽  
Hydrogen Ion ◽  
Silicon Substrates ◽  
Hydrogen Distribution ◽  
Implantation Energy ◽  
Defect Zone ◽  
Atomic Force ◽  
Boron Doped ◽  
Doped Silicon ◽  
Heavily Doped

AbstractThe defects caused by hydrogen ion (H+) implantation were studied for heavily arsenic (As), boron (B), and phosphorous (P) doped (100) silicon substrates. At the implantation energy of 170keV, H+ beam generates defect zones in both arsenic and boron doped silicon wafers. The width of implant damage zone in the heavily As-doped silicon increased from 138nm to 415nm when H+ ion implant dose increased from1×1016 ion//cm2 to 5×1016 ion/cm2, respectively. This dependence is however, opposite in the heavily B-doped substrate. The defect zone decreased with increasing H+ ion dose. The second ion mass spectrometry (SIMS) data show that in both heavily As- and P-doped silicon substrates, hydrogen distribution was governed by both H+-dopant pairing reaction and the amount of the crystal damage, whereas it is exclusively determined by pairing reaction in heavily B-doped silicon substrates. The atomic force microscope (AFM) measurement indicated that the rms roughness of the as-exfoliated surface was 18.86nm, 13.06nm, and 6.79nm for P-, As- and B-doped silicon substrates, respectively. An rms roughness improvement of 20nm-170nm was observed when wafers were annealed at 270°C.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells
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