Misfit Dislocations in Bicrystals of Epitaxially Grown Silicon on Boron‐Doped Silicon Substrates

1969 ◽  
Vol 40 (8) ◽  
pp. 3089-3094 ◽  
Author(s):  
Yoshimitsu Sugita ◽  
Masao Tamura ◽  
Katsuro Sugawara
Keyword(s):  
Silicon Substrates ◽  
Misfit Dislocations ◽  
Boron Doped ◽  
Doped Silicon

New gettering using misfit dislocations in homoepitaxial wafers with heavily boron‐doped silicon substrates

1989 ◽  
Vol 54 (5) ◽  
pp. 463-465 ◽  
Author(s):  
H. Kikuchi ◽  
M. Kitakata ◽  
F. Toyokawa ◽  
M. Mikami
Keyword(s):  
Silicon Substrates ◽  
Misfit Dislocations ◽  
Boron Doped ◽  
Doped Silicon

Misfit Dislocations in the Bicrystal System of Silicon-Boron-Doped Silicon

1969 ◽  
Vol 6 (4) ◽  
pp. 585-588 ◽  
Author(s):  
Yoshimitsu Sugita ◽  
Masao Tamura ◽  
Katsuro Sugawara
Keyword(s):  
Misfit Dislocations ◽  
Boron Doped ◽  
Doped Silicon

Extraction of Elastic Parameters of Heavily Boron-Doped Silicon Layer by Elimination of Misfit Dislocations

1995 ◽  
Vol 378 ◽  
Author(s):  
HO-JUN Lee ◽  
Chul-Hi Han ◽  
Choong-Ki Kim
Keyword(s):  
Young’S Modulus ◽  
Boron Concentration ◽  
Young's Modulus ◽  
Silicon Layer ◽  
Misfit Dislocations ◽  
Residual Tensile Stress ◽  
X Ray Diffraction ◽  
Elastic Parameters ◽  
Boron Doped ◽  
Doped Silicon

AbstractIn this paper, various elastic parameters of heavily boron-doped silicon layer have been extracted by eliminating the misfit dislocations in the layer. The dislocation-free silicon membranes doped with the boron concentration of 1.3 × 1020 atoms/cm3 have been fabricated and the Young’s modulus of 1.45 × 1012 dyn/cm2 and residual tensile stress of 2.7 × 109 dyn/cm2 have been extracted by blister method. From the Young’s modulus and residual stress, the residual tensile strain of 1.34 × 10−3, lattice constant of 5.424 Å, and misfit coefficient of 1.03 × 10−23 cm3/atom have been calculated. These parameters are very similar to those obtained from X-ray diffraction analysis and theory.

Hydrogen Ion Implantation Caused Defect Structures in Heavily Doped Silicon Substrates

2005 ◽  
Vol 864 ◽  
Author(s):  
Minhua Li ◽  
Q. Wang
Keyword(s):  
Damage Zone ◽  
Hydrogen Ion ◽  
Silicon Substrates ◽  
Hydrogen Distribution ◽  
Implantation Energy ◽  
Defect Zone ◽  
Atomic Force ◽  
Boron Doped ◽  
Doped Silicon ◽  
Heavily Doped

AbstractThe defects caused by hydrogen ion (H+) implantation were studied for heavily arsenic (As), boron (B), and phosphorous (P) doped (100) silicon substrates. At the implantation energy of 170keV, H+ beam generates defect zones in both arsenic and boron doped silicon wafers. The width of implant damage zone in the heavily As-doped silicon increased from 138nm to 415nm when H+ ion implant dose increased from1×1016 ion//cm2 to 5×1016 ion/cm2, respectively. This dependence is however, opposite in the heavily B-doped substrate. The defect zone decreased with increasing H+ ion dose. The second ion mass spectrometry (SIMS) data show that in both heavily As- and P-doped silicon substrates, hydrogen distribution was governed by both H+-dopant pairing reaction and the amount of the crystal damage, whereas it is exclusively determined by pairing reaction in heavily B-doped silicon substrates. The atomic force microscope (AFM) measurement indicated that the rms roughness of the as-exfoliated surface was 18.86nm, 13.06nm, and 6.79nm for P-, As- and B-doped silicon substrates, respectively. An rms roughness improvement of 20nm-170nm was observed when wafers were annealed at 270°C.

Erratum: Misfit Dislocations in the Bicrystal System of Silicon–Boron-Doped Silicon

1970 ◽  
Vol 7 (2) ◽  
pp. 369-369
Author(s):  
Yoshimitsu Sugita ◽  
Masao Tamura ◽  
Katsuro Sugawara
Keyword(s):  
Misfit Dislocations ◽  
Boron Doped ◽  
Doped Silicon

Erratum: Misfit Dislocations in Bicrystals of Epitaxially Grown Silicon on Boron‐Doped Silicon Substrate

1970 ◽  
Vol 41 (4) ◽  
pp. 1877-1877
Author(s):  
Yoshimitsu Sugita ◽  
Masao Tamura ◽  
Katsuro Sugawara
Keyword(s):  
Silicon Substrate ◽  
Misfit Dislocations ◽  
Boron Doped ◽  
Doped Silicon

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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