Metal–insulator semiconductor properties of molecular‐beam epitaxy grown HgCdTe heterostructures

1990 ◽  
Vol 8 (2) ◽  
pp. 1226-1232 ◽  
Author(s):  
M. W. Goodwin ◽  
M. A. Kinch ◽  
R. J. Koestner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Properties

Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator- Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1200-L1202 ◽  
Author(s):  
Kunio Ichino ◽  
Toshikazu Onishi ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Semiconductor Diode ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy

2019 ◽  
Vol 64 (3) ◽  
pp. 289-293 ◽  
Author(s):  
A. V. Voitsekhovskii ◽  
S. N. Nesmelov ◽  
S. M. Dzyadukh ◽  
S. A. Dvoretsky ◽  
N. N. Mikhailov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitive Properties

scholarly journals Влияние имплантации ионов As-=SUP=-+-=/SUP=- и последующего отжига на электрические свойства приповерхностных слоев варизонных пленок n-Hg-=SUB=-0.78-=/SUB=-Cd-=SUB=-0.22-=/SUB=-Te

2021 ◽  
Vol 47 (4) ◽  
pp. 33
Author(s):  
А.В. Войцеховский ◽  
С.Н. Несмелов ◽  
С.М. Дзядух ◽  
В.С. Варавин ◽  
С.А. Дворецкий ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface States ◽  
Surface Layers ◽  
Metal Insulator ◽  
Near Surface ◽  
Metal Insulator Semiconductor ◽  
Wide Gap ◽  
Mis Structures

Films of n-Hg0.775Cd0.225Te with near-surface wide-gap layers were grown by molecular beam epitaxy on Si (013) substrates. To measure the admittance, metal – insulator – semiconductor (MIS) structures were fabricated on the basis of the as-grown HgCdTe film, films after implantation, and films after implantation and annealing. Using techniques that take into account the presence of graded-gap layers and slow interface states, the main parameters of the near-surface layers of HgCdTe films have been determined after the technological procedures used to create photodiodes.

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