Substrate temperature dependence of subcutaneous oxidation at Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition

1990 ◽  
Vol 8 (3) ◽  
pp. 2039-2045 ◽  
Author(s):  
S. S. Kim ◽  
D. J. Stephens ◽  
G. Lucovsky ◽  
G. G. Fountain ◽  
R. J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

TRANSPORT PROPERTIES OF CrO2 (100) FILM GROWN ON TiO2 BY A SIMPLE ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITION

2014 ◽  
Vol 21 (04) ◽  
pp. 1450055
Author(s):  
LIANG XIE ◽  
JIN ZHI ZHANG ◽  
NAI YI CUI ◽  
HONG GUANG ZHANG
Keyword(s):  
Chemical Vapor Deposition ◽  
Temperature Dependence ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Residual Resistivity ◽  
Low Field ◽  
Oriented Film ◽  
Critical Wavelength ◽  
Simple Chemical ◽  
Pressure Chemical

Epitaxial CrO 2 (100)-oriented film was successfully fabricated on TiO 2 (100) substrate by a simple chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO 3 precursor. The transport measurements show that the CrO 2 film is metallic with a small residual resistivity 4 μΩ cm down to 0.6 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T) = ρ0 + AT2 exp (-Δ/T) over the range of 0.6–300 K with Δ = 123.6 K. The magnetization of the film becomes saturated in a relatively low field with a small coercive field. The temperature dependence of magnetization shows Bloch's T3/2 law and the slope of the curve suggests a critical wavelength of λΔ ~ 26.6 Å beyond which spin-flip scattering becomes important.

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

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