Electron diffusion length and escape probability measurements for p‐type GaAs(100) epitaxies

1990 ◽  
Vol 8 (5) ◽  
pp. 3676-3681 ◽  
Author(s):  
G. Vergara ◽  
L. J. Gómez ◽  
J. Presa ◽  
M. T. Montojo
Keyword(s):  
Diffusion Length ◽  
Escape Probability ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
P Type

Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

2018 ◽  
Vol 123 (23) ◽  
pp. 235104 ◽  
Author(s):  
Jonathan Lee ◽  
Chris J. Fredricksen ◽  
Elena Flitsiyan ◽  
Robert E. Peale ◽  
Leonid Chernyak ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Diffusion Length ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
P Type

scholarly journals Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

2000 ◽  
Vol 77 (6) ◽  
pp. 875-877 ◽  
Author(s):  
Leonid Chernyak ◽  
Andrei Osinsky ◽  
Vladimir Fuflyigin ◽  
E. F. Schubert
Keyword(s):  
Electron Beam ◽  
Diffusion Length ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
P Type

Electron diffusion length and lifetime in p-type GaN

1998 ◽  
Vol 73 (22) ◽  
pp. 3276-3278 ◽  
Author(s):  
Z. Z. Bandić ◽  
P. M. Bridger ◽  
E. C. Piquette ◽  
T. C. McGill
Keyword(s):  
Diffusion Length ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
P Type

Study of Diffusion Length and Alloy Segregation in MOCVD AlGaAs

1987 ◽  
Vol 102 ◽  
Author(s):  
J. L. Bradshaw ◽  
W. J. Choyke ◽  
Z. C. Feng ◽  
D. L. Meier ◽  
R. L. Messham
Keyword(s):  
Low Temperature ◽  
Diffusion Length ◽  
Electron Diffusion ◽  
Direct Excitation ◽  
Gaas Substrates ◽  
Electron Diffusion Length ◽  
Alloy Segregation ◽  
Low Temperature Photoluminescence

ABSTRACTVarious thicknesses of AlGaAs are grown on GaAs substrates by MOCVD. Low temperature photoluminescence of the substrate is observed even for layers of AlGaAs 24μm thick. Direct excitation by the 488.0 nm pumping radiation and excitation by reradiation from the AlGaAs are eliminated as causes. From photoluminescence and EBIC studies, evidence is given to show that the substrate luminescence is caused by a much larger than expected electron diffusion length. A small trace of GaAs luminescence may be due to alloy segregation in the AlGaAs films themselves.

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