Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

Leonid Chernyak; Andrei Osinsky; Vladimir Fuflyigin; E. F. Schubert

doi:10.1063/1.1306910

Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

Applied Physics Letters ◽

10.1063/1.1306910 ◽

2000 ◽

Vol 77 (6) ◽

pp. 875-877 ◽

Cited By ~ 51

Author(s):

Leonid Chernyak ◽

Andrei Osinsky ◽

Vladimir Fuflyigin ◽

E. F. Schubert

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Electron Diffusion ◽

Electron Diffusion Length ◽

P Type

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Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

Journal of Applied Physics ◽

10.1063/1.5030444 ◽

2018 ◽

Vol 123 (23) ◽

pp. 235104 ◽

Cited By ~ 1

Author(s):

Jonathan Lee ◽

Chris J. Fredricksen ◽

Elena Flitsiyan ◽

Robert E. Peale ◽

Leonid Chernyak ◽

...

Keyword(s):

Gamma Radiation ◽

Diffusion Length ◽

Electron Diffusion ◽

Electron Diffusion Length ◽

P Type

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Electron diffusion length and escape probability measurements for p‐type GaAs(100) epitaxies

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576479 ◽

1990 ◽

Vol 8 (5) ◽

pp. 3676-3681 ◽

Cited By ~ 11

Author(s):

G. Vergara ◽

L. J. Gómez ◽

J. Presa ◽

M. T. Montojo

Keyword(s):

Diffusion Length ◽

Escape Probability ◽

Electron Diffusion ◽

Electron Diffusion Length ◽

P Type

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Determination of electron-diffusion length from photocurrent characteristics of the structure ITO/a-SiC:H(p-type)/a-Si:H/a-Si:H(n-type)/Pd

Applied Physics A Solids and Surface ◽

10.1007/bf00331724 ◽

1994 ◽

Vol 59 (4) ◽

pp. 431-433 ◽

Cited By ~ 2

Author(s):

T. Serin ◽

N. Serin

Keyword(s):

Diffusion Length ◽

Type A ◽

Electron Diffusion ◽

Electron Diffusion Length ◽

P Type

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The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique

Journal of Applied Physics ◽

10.1063/1.4746740 ◽

2012 ◽

Vol 112 (4) ◽

pp. 044501

Author(s):

D. Wee ◽

G. Parish ◽

B. D. Nener

Keyword(s):

Diffusion Length ◽

Electron Diffusion ◽

Electron Diffusion Length ◽

P Type ◽

Franz Keldysh Effect

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Concentration dependence of the electron diffusion length in p-type GaAs

Crystal Research and Technology ◽

10.1002/crat.2170190220 ◽

1984 ◽

Vol 19 (2) ◽

pp. 285-290 ◽

Cited By ~ 4

Author(s):

E. Vigil ◽

P. Diaz

Keyword(s):

Concentration Dependence ◽

Diffusion Length ◽

Electron Diffusion ◽

Electron Diffusion Length ◽

P Type

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Electron diffusion length and lifetime in p-type GaN

Applied Physics Letters ◽

10.1063/1.122743 ◽

1998 ◽

Vol 73 (22) ◽

pp. 3276-3278 ◽

Cited By ~ 73

Author(s):

Z. Z. Bandić ◽

P. M. Bridger ◽

E. C. Piquette ◽

T. C. McGill

Keyword(s):

Diffusion Length ◽

Electron Diffusion ◽

Electron Diffusion Length ◽

P Type

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Carbon Nitride/Reduced Graphene Oxide Film with Enhanced Electron Diffusion Length: An Efficient Photo-Electrochemical Cell for Hydrogen Generation

Advanced Energy Materials ◽

10.1002/aenm.201800566 ◽

2018 ◽

Vol 8 (23) ◽

pp. 1800566 ◽

Cited By ~ 44

Author(s):

Guiming Peng ◽

Michael Volokh ◽

Jonathan Tzadikov ◽

Jingwen Sun ◽

Menny Shalom

Keyword(s):

Graphene Oxide ◽

Oxide Film ◽

Reduced Graphene Oxide ◽

Carbon Nitride ◽

Diffusion Length ◽

Hydrogen Generation ◽

Electrochemical Cell ◽

Electron Diffusion ◽

Reduced Graphene ◽

Electron Diffusion Length

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Measurement of Electron Diffusion Length by Photoluminescence in p-Doped GaAs Substrates and p-Doped Epitaxially Grown GaAs Photocathodes

Photo-Electronic Image Devices, Proceedings of the Fifth Symposium held at Imperial College - Advances in Electronics and Electron Physics ◽

10.1016/s0065-2539(08)61316-5 ◽

1972 ◽

pp. 389-408

Author(s):

G. Lengyel ◽

S. Nardone ◽

D. Pommerrenig

Keyword(s):

Diffusion Length ◽

Electron Diffusion ◽

Gaas Substrates ◽

Electron Diffusion Length

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Highly Efficient Polymeric Carbon Nitride Photoanode with Excellent Electron Diffusion Length and Hole Extraction Properties

Nano Letters ◽

10.1021/acs.nanolett.0c01484 ◽

2020 ◽

Vol 20 (6) ◽

pp. 4618-4624 ◽

Cited By ~ 5

Author(s):

Neeta Karjule ◽

Jesús Barrio ◽

Lidan Xing ◽

Michael Volokh ◽

Menny Shalom

Keyword(s):

Carbon Nitride ◽

Diffusion Length ◽

Electron Diffusion ◽

Highly Efficient ◽

Extraction Properties ◽

Electron Diffusion Length ◽

Polymeric Carbon

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Study of Diffusion Length and Alloy Segregation in MOCVD AlGaAs

MRS Proceedings ◽

10.1557/proc-102-595 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 1

Author(s):

J. L. Bradshaw ◽

W. J. Choyke ◽

Z. C. Feng ◽

D. L. Meier ◽

R. L. Messham

Keyword(s):

Low Temperature ◽

Diffusion Length ◽

Electron Diffusion ◽

Direct Excitation ◽

Gaas Substrates ◽

Electron Diffusion Length ◽

Alloy Segregation ◽

Low Temperature Photoluminescence

ABSTRACTVarious thicknesses of AlGaAs are grown on GaAs substrates by MOCVD. Low temperature photoluminescence of the substrate is observed even for layers of AlGaAs 24μm thick. Direct excitation by the 488.0 nm pumping radiation and excitation by reradiation from the AlGaAs are eliminated as causes. From photoluminescence and EBIC studies, evidence is given to show that the substrate luminescence is caused by a much larger than expected electron diffusion length. A small trace of GaAs luminescence may be due to alloy segregation in the AlGaAs films themselves.

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