Temperature‐dependent photoemission study of the HgTe–CdTe valence‐band discontinuity

1989 ◽  
Vol 7 (2) ◽  
pp. 427-430 ◽  
Author(s):  
R. Sporken ◽  
S. Sivananthan ◽  
J. P. Faurie ◽  
D. H. Ehlers ◽  
J. Fraxedas ◽  
...  
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Photoemission Study ◽  
Valence Band Discontinuity

scholarly journals Temperature-dependent valence-band photoemission study of UNiSn

2001 ◽  
Vol 64 (8) ◽  
Author(s):  
J.-S. Kang ◽  
J.-G. Park ◽  
K. A. McEwen ◽  
C. G. Olson ◽  
S. K. Kwon ◽  
...  
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Photoemission Study

scholarly journals PHOTOEMISSION STUDY OF VALENCE BAND DISCONTINUITY OF Si/GaP(Ⅲ)HETEROINTERFACE

1993 ◽  
Vol 42 (10) ◽  
pp. 1654
Author(s):  
HUANG CHUN-HUI ◽  
CHEN PING ◽  
WANG XUN
Keyword(s):  
Valence Band ◽  
Photoemission Study ◽  
Valence Band Discontinuity

A Photoemission Study of the Epitaxial Growth of Si on Gap(110)

1987 ◽  
Vol 94 ◽  
Author(s):  
David W. Niles ◽  
Ming Tang ◽  
Hartmut Höchst
Keyword(s):  
Fermi Level ◽  
Epitaxial Growth ◽  
Valence Band ◽  
Surface State ◽  
Photoemission Spectroscopy ◽  
Fermi Level Position ◽  
Ultraviolet Photoemission Spectroscopy ◽  
Photoemission Study ◽  
Valence Band Discontinuity

ABSTRACTWe have used angular resolved ultraviolet photoemission spectroscopy to study the epitaxial growth of Si on GaP(110). Surface state emission obscures the top of the valence band (TVB). The Fermi level for the clean GaP(110) surface is 1.20±0.05eV above the TVB. 1ML (monolayer) of Si pins the Fermi level position at 1.40±0.05eV above the TVB. Further deposition of Si leads to a valence band discontinuity ΔEv=1.07 ±0.10eV.

Interface properties and valence-band discontinuity of MnS/ZnSe heterostructures

1996 ◽  
Vol 54 (4) ◽  
pp. 2718-2722 ◽  
Author(s):  
L. Wang ◽  
S. Sivananthan ◽  
R. Sporken ◽  
R. Caudano
Keyword(s):  
Valence Band ◽  
Interface Properties ◽  
Valence Band Discontinuity

Valence photoemission study of temperature dependent reaction products in Ni-Si interfaces and thin films

1982 ◽  
Vol 43 (3) ◽  
pp. 199-202 ◽  
Author(s):  
I. Abbati ◽  
L. Braicovich ◽  
B. De Michelis ◽  
U. del Pennino ◽  
S. Valeri
Keyword(s):  
Thin Films ◽  
Reaction Products ◽  
Temperature Dependent ◽  
Photoemission Study

A core level and valence band photoemission study of the (111) and () surfaces of 3C–SiC

2001 ◽  
Vol 470 (3) ◽  
pp. 284-292 ◽  
Author(s):  
P.-A Glans ◽  
T Balasubramanian ◽  
M Syväjärvi ◽  
R Yakimova ◽  
L.I Johansson
Keyword(s):  
Valence Band ◽  
Core Level ◽  
Photoemission Study

Comment on ‘‘Photoemission study of the existence of a valence-band satellite in Fe’’

1986 ◽  
Vol 34 (12) ◽  
pp. 8971-8972 ◽  
Author(s):  
D. Chandesris ◽  
J. Lecante ◽  
Y. Petroff
Keyword(s):  
Valence Band ◽  
Photoemission Study

Reply to ‘‘Comment on ‘Photoemission study of the existence of a valence-band satellite in Fe’ ’’

1986 ◽  
Vol 34 (12) ◽  
pp. 8973-8974 ◽  
Author(s):  
H. Kato ◽  
T. Ishii ◽  
S. Masuda ◽  
Y. Harada ◽  
T. Miyano ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Study

Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

1995 ◽  
Vol 378 ◽  
Author(s):  
Art J. Nelson ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Interfacial Chemistry ◽  
Valence Band Offset ◽  
Force Microscopy ◽  
Atomic Force ◽  
Valence Band Discontinuity

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

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