scholarly journals Temperature-dependent valence-band photoemission study of UNiSn

2001 ◽  
Vol 64 (8) ◽  
Author(s):  
J.-S. Kang ◽  
J.-G. Park ◽  
K. A. McEwen ◽  
C. G. Olson ◽  
S. K. Kwon ◽  
...  
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Photoemission Study

Temperature‐dependent photoemission study of the HgTe–CdTe valence‐band discontinuity

1989 ◽  
Vol 7 (2) ◽  
pp. 427-430 ◽  
Author(s):  
R. Sporken ◽  
S. Sivananthan ◽  
J. P. Faurie ◽  
D. H. Ehlers ◽  
J. Fraxedas ◽  
...  
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Photoemission Study ◽  
Valence Band Discontinuity

Valence photoemission study of temperature dependent reaction products in Ni-Si interfaces and thin films

1982 ◽  
Vol 43 (3) ◽  
pp. 199-202 ◽  
Author(s):  
I. Abbati ◽  
L. Braicovich ◽  
B. De Michelis ◽  
U. del Pennino ◽  
S. Valeri
Keyword(s):  
Thin Films ◽  
Reaction Products ◽  
Temperature Dependent ◽  
Photoemission Study

A core level and valence band photoemission study of the (111) and () surfaces of 3C–SiC

2001 ◽  
Vol 470 (3) ◽  
pp. 284-292 ◽  
Author(s):  
P.-A Glans ◽  
T Balasubramanian ◽  
M Syväjärvi ◽  
R Yakimova ◽  
L.I Johansson
Keyword(s):  
Valence Band ◽  
Core Level ◽  
Photoemission Study

Comment on ‘‘Photoemission study of the existence of a valence-band satellite in Fe’’

1986 ◽  
Vol 34 (12) ◽  
pp. 8971-8972 ◽  
Author(s):  
D. Chandesris ◽  
J. Lecante ◽  
Y. Petroff
Keyword(s):  
Valence Band ◽  
Photoemission Study

Reply to ‘‘Comment on ‘Photoemission study of the existence of a valence-band satellite in Fe’ ’’

1986 ◽  
Vol 34 (12) ◽  
pp. 8973-8974 ◽  
Author(s):  
H. Kato ◽  
T. Ishii ◽  
S. Masuda ◽  
Y. Harada ◽  
T. Miyano ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Study

Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As

2006 ◽  
Vol 89 (17) ◽  
pp. 172509 ◽  
Author(s):  
M. Adell ◽  
J. Adell ◽  
L. Ilver ◽  
J. Kanski ◽  
J. Sadowski
Keyword(s):  
Low Temperature ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoemission Study ◽  
Low Temperature Gaas

Photoemission Study of K Doping on a Monolayer of C60 on Clean Si(001)-(2 × 1) Surface

1998 ◽  
Vol 05 (01) ◽  
pp. 101-104 ◽  
Author(s):  
Tun-Wen Pi ◽  
Le-Hong Hong ◽  
Rong-Tzong Wu ◽  
Chiu-Ping Cheng ◽  
May-Ho Ko
Keyword(s):  
Binding Energy ◽  
Work Function ◽  
Valence Band ◽  
Weak Interaction ◽  
Silicon Surface ◽  
Many Body ◽  
Body Effect ◽  
Charge Polarization ◽  
The Many ◽  
Photoemission Study

We present the first valence band photoemission study of a monolayer K x C 60 on a clean Si(001)-(2 × 1) surface. The monolayer C60 which shows weak interaction with the silicon surface reveals clear, but broadened, structures corresponding to bulk C 60. Upon K exposure, the work function drops rapidly due to charge polarization toward the Si surface, considerably affecting then the rate of the Lumo filling. Its centroid initially shown at 0.6 eV shifts to higher binding energy with higher concentration. Moreover, the LUMO always separates 1.5 ± 0.1 eV from the Homo. Features associated with the many-body effect do not appear in the spectra. The Fermi cutoff has never been observed, indicating the insulating nature of the K x C 60 surface.

A core level and valence band photoemission study of 6H-SiC

1998 ◽  
Vol 405 (2-3) ◽  
pp. 288-297 ◽  
Author(s):  
L.I Johansson ◽  
P.-A Glans ◽  
N Hellgren
Keyword(s):  
Valence Band ◽  
Core Level ◽  
Photoemission Study
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