Static secondary ion mass spectroscopy study of ethylene and acetylene on Ni: Coverage dependence

1989 ◽  
Vol 7 (3) ◽  
pp. 1991-1995 ◽  
Author(s):  
X.‐Y. Zhu ◽  
M. E. Castro ◽  
S. Akhter ◽  
J. M. White ◽  
J. E. Houston
Keyword(s):  
Mass Spectroscopy ◽  
Spectroscopy Study ◽  
Secondary Ion Mass Spectroscopy ◽  
Coverage Dependence ◽  
Secondary Ion

Secondary Ion Mass Spectroscopy Study of Oxygen-18 Tracer Diffusion in 2/1-Mullite Single Crystals

2001 ◽  
Vol 84 (12) ◽  
pp. 2845-2848 ◽  
Author(s):  
Peter Fielitz ◽  
Günter Borchardt ◽  
Martin Schmücker ◽  
Hartmut Schneider ◽  
Michael Wiedenbeck ◽  
...  
Keyword(s):  
Single Crystals ◽  
Mass Spectroscopy ◽  
Tracer Diffusion ◽  
Spectroscopy Study ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Secondary ion mass spectroscopy study of Zn or Cd implanted and rapid thermally annealed Pd/Ge contacts top‐In0.53Ga0.47As

1994 ◽  
Vol 65 (9) ◽  
pp. 1174-1176 ◽  
Author(s):  
P. Ressel ◽  
H. Strusny ◽  
M. Trapp ◽  
H. Kräutle ◽  
D. Fritzsche
Keyword(s):  
Mass Spectroscopy ◽  
Spectroscopy Study ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Investigation of Ga Diffusion in (001) and (111) CdTe Layers Grown on (001) GaAs

1988 ◽  
Vol 131 ◽  
Author(s):  
J. J. Dubowski ◽  
J. M. Wrobel ◽  
J. A. Jackman ◽  
P. Becla
Keyword(s):  
Detection Limit ◽  
Thermal Annealing ◽  
Mass Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Evaporation ◽  
Spectroscopy Study ◽  
Ion Imaging ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

ABSTRACTA secondary ion mass spectroscopy study of Ga diffusion in CdTe grown on (001) GaAs was carried out. The layers were grown by pulsed laser evaporation and epitaxy. Two characteristic regions with increased Ga concentration were found. The first was the CdTe/GaAs interface where the concentration of Ga decreases rapidly to the detection limit of −8 × 1014 cm−3. This region was usually less than 300 nm wide. The second was a surface region with a Ga accumulation of up to −1017 cm−3. Ion imaging revealed that in the (001) CdTe layers, Ga accumulates near the surface at localized spots, up to about 8 μm in diameter. This feature is less apparent in the (111) CdTe layers. Annealing at 500 °C for 1 h increased the Ga concentration in the whole layer to above 1016 cm−3. We also observe thermal annealing induced precipitation of Ga at the surface of bulk CdTe samples which were originally uniformly doped with Ga.

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