Stress in Y2O3 thin films deposited by radio‐frequency magnetron and ion beam sputtering

1989 ◽  
Vol 7 (3) ◽  
pp. 2256-2260 ◽  
Author(s):  
R. W. Tustison ◽  
T. E. Varitimos ◽  
D. G. Montanari ◽  
J. M. Wahl
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Ion Beam ◽  
Radio Frequency Magnetron ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Effect of Thermal Annealing on Electrical Properties of Si-LiNbO3

2011 ◽  
Vol 700 ◽  
pp. 53-57 ◽  
Author(s):  
Valentin M. Ievlev ◽  
Maxim P. Sumets ◽  
Alexander V. Kostyuchenko
Keyword(s):  
Electrical Properties ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Conduction Mechanism ◽  
Ion Beam ◽  
Radio Frequency Magnetron ◽  
Ion Beam Sputtering ◽  
Charge Localization ◽  
Jump Distance ◽  
Beam Sputtering

The substructure and electrical properties of the films with the thickness up to 2.0 µm deposited on Si by the methods of the radio frequency magnetron and ion-beam sputtering of a LiNbO3 target have been investigated. It has been established that in thermally annealed samples an activated conduction mechanism with variable jump distance takes place. As a result of thermal annealing a decrease in the charge localization centers (CLC) in the LiNbO3 films from Nt=3·1018cm-3 to Nt=3·1016cm-3 occurs.

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

scholarly journals Fabrication of the Ln-Ba-Cu-O thin films by ion beam sputtering.

Shinku ◽  
1989 ◽  
Vol 32 (3) ◽  
pp. 259-262
Author(s):  
Tetsuro TAJIMA ◽  
Hajime KUWAHARA ◽  
Kohei OTANI ◽  
Tsutom YOTSUYA ◽  
Yoshihiko SUZUKI ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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