Characterization of molecular‐beam epitaxially grown CdTe surfaces by high‐energy electron diffraction and synchrotron radiation photoemission spectroscopy

Isaac Hernández‐Calderón; David W. Niles; Hartmut Höchst

doi:10.1116/1.575698

Characterization of molecular‐beam epitaxially grown CdTe surfaces by high‐energy electron diffraction and synchrotron radiation photoemission spectroscopy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.575698 ◽

1988 ◽

Vol 6 (3) ◽

pp. 1343-1347 ◽

Cited By ~ 9

Author(s):

Isaac Hernández‐Calderón ◽

David W. Niles ◽

Hartmut Höchst

Keyword(s):

Synchrotron Radiation ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Photoemission Spectroscopy ◽

High Energy Electron ◽

Synchrotron Radiation Photoemission

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Characterization of molecular-beam epitaxially grown CdTe surfaces by high-energy electron diffraction and synchrotron radiation photo-emission spectroscopy

Vacuum ◽

10.1016/0042-207x(89)90888-9 ◽

1989 ◽

Vol 39 (10) ◽

pp. 989

Keyword(s):

Synchrotron Radiation ◽

Electron Diffraction ◽

Emission Spectroscopy ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91270-x ◽

1994 ◽

Vol 137 (1-2) ◽

pp. 187-194 ◽

Cited By ~ 12

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

In Situ Characterization

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Combined Rayleigh and Raman scattering study of AlxGa1−xAs grown via molecular beam epitaxy under reflection high‐energy electron diffraction determined growth conditions

Applied Physics Letters ◽

10.1063/1.99311 ◽

1988 ◽

Vol 52 (1) ◽

pp. 42-44 ◽

Cited By ~ 2

Author(s):

W. C. Tang ◽

P. D. Lao ◽

A. Madhukar ◽

N. M. Cho

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Raman Scattering ◽

Molecular Beam ◽

Growth Conditions ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Scattering Study

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Measurement of reflection high-energy electron diffraction oscillations during molecular-beam epitaxial growth of GaAs on a rotating substrate

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586241 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1784 ◽

Cited By ~ 6

Author(s):

G. W. Turner

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Observation of reflection high-energy electron diffraction oscillation during metalorganic-molecular-beam epitaxy of AlAs and control of carbon incorporation

Journal of Applied Physics ◽

10.1063/1.1606515 ◽

2003 ◽

Vol 94 (8) ◽

pp. 4871 ◽

Cited By ~ 5

Author(s):

Sasikala Ganapathy ◽

Makoto Kurimoto ◽

Periyasamy Thilakan ◽

Kasturi Uesugi ◽

Ikuo Suemune ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Carbon Incorporation ◽

Metalorganic Molecular Beam Epitaxy ◽

And Control

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Surface reconstructions of Si(001) observed using reflection‐high‐ energy‐electron diffraction during molecular‐beam epitaxial growth from disilane

Applied Physics Letters ◽

10.1063/1.105694 ◽

1991 ◽

Vol 59 (26) ◽

pp. 3419-3421 ◽

Cited By ~ 24

Author(s):

S. M. Mokler ◽

W. K. Liu ◽

N. Ohtani ◽

B. A. Joyce

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Surface Reconstructions ◽

Molecular Beam Epitaxial Growth

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In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

Applied Physics Letters ◽

10.1063/1.2432293 ◽

2007 ◽

Vol 90 (4) ◽

pp. 041918 ◽

Cited By ~ 51

Author(s):

J. Schörmann ◽

S. Potthast ◽

D. J. As ◽

K. Lischka

Keyword(s):

Electron Diffraction ◽

High Energy ◽

Energy Electron ◽

In Situ Growth ◽

High Energy Electron ◽

Growth Regime ◽

Cubic Gan

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Growth kinetics and step density in reflection high‐energy electron diffraction during molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.341041 ◽

1988 ◽

Vol 63 (7) ◽

pp. 2272-2283 ◽

Cited By ~ 141

Author(s):

Shaun Clarke ◽

Dimitri D. Vvedensky

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Growth Kinetics ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Step Density

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Reflection high-energy electron diffraction (RHEED) for in situ characterization of thin film growth

In Situ Characterization of Thin Film Growth ◽

10.1533/9780857094957.1.3 ◽

2011 ◽

pp. 3-28 ◽

Cited By ~ 2

Author(s):

G. Koster

Keyword(s):

Thin Film ◽

Electron Diffraction ◽

Film Growth ◽

High Energy ◽

Thin Film Growth ◽

Energy Electron ◽

High Energy Electron ◽

In Situ Characterization

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Reflection high-energy electron-diffraction and photoemission spectroscopy study of GaAs(001) surface modified by Se adsorption

Physical Review B ◽

10.1103/physrevb.45.8498 ◽

1992 ◽

Vol 45 (15) ◽

pp. 8498-8505 ◽

Cited By ~ 65

Author(s):

Shinichiro Takatani ◽

Takeshi Kikawa ◽

Masatoshi Nakazawa

Keyword(s):

Electron Diffraction ◽

High Energy ◽

Energy Electron ◽

Photoemission Spectroscopy ◽

Spectroscopy Study ◽

High Energy Electron ◽

Surface Modified

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