Quantitative analysis of chemical vapor deposition refractory metal silicides

1987 ◽  
Vol 5 (4) ◽  
pp. 1979-1983 ◽  
Author(s):  
Lori A. Streit ◽  
Peter Williams
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantitative Analysis ◽  
Vapor Deposition ◽  
Refractory Metal ◽  
Chemical Vapor ◽  
Metal Silicides

Chemical vapor deposition of refractory metal silicides

1989 ◽  
Vol 38 (1-4) ◽  
pp. 407
Author(s):  
E. Mastromatteo ◽  
J.F. Million Brodaz ◽  
R. Madar ◽  
E. Blanquet ◽  
C. Vahlas ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Refractory Metal ◽  
Chemical Vapor ◽  
Metal Silicides

SBA-15-Supported Metal Silicides Prepared by Chemical Vapor Deposition as Efficient Catalysts Towards the Semihydrogenation of Phenylacetylene

ChemCatChem ◽  
2017 ◽  
Vol 9 (7) ◽  
pp. 1337-1342 ◽  
Author(s):  
Kaixuan Yang ◽  
Xiao Chen ◽  
Lei Wang ◽  
Liangliang Zhang ◽  
Shaohua Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Silicides ◽  
Supported Metal

New Precursors for the Organometallic Chemical Vapor Deposition of Aluminum Nitride

1988 ◽  
Vol 131 ◽  
Author(s):  
Wayne L. Gladfelter ◽  
David C. Boyd ◽  
Jen-WeI Hwang ◽  
Richard T. Haasch ◽  
John F. Evans ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Quantitative Analysis ◽  
Aluminum Nitride ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Reaction Rate ◽  
Activation Barrier ◽  
Chemical Vapor ◽  
A Value

ABSTRACTOrganometallic aluminum azides have been found to be effective precursors for the low temperature chemical vapor deposition of thin films of aluminum nitride. Quantitative analysis of the gas phase products of the reaction are used to develop an understanding of the reaction. Rate studies of the deposition were performed in the temperature range from 400 to 800°C. Below 525°C, an activation barrier of 26.4 kcal/mol was found, while above 525°C, a value of 5.23 kcal/mol was obtained. The effects of the presence of N-C bonds and the type of Al-N interaction within the precursor are evaluated.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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