New Precursors for the Organometallic Chemical Vapor Deposition of Aluminum Nitride

1988 ◽  
Vol 131 ◽  
Author(s):  
Wayne L. Gladfelter ◽  
David C. Boyd ◽  
Jen-WeI Hwang ◽  
Richard T. Haasch ◽  
John F. Evans ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Quantitative Analysis ◽  
Aluminum Nitride ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Reaction Rate ◽  
Activation Barrier ◽  
Chemical Vapor ◽  
A Value

ABSTRACTOrganometallic aluminum azides have been found to be effective precursors for the low temperature chemical vapor deposition of thin films of aluminum nitride. Quantitative analysis of the gas phase products of the reaction are used to develop an understanding of the reaction. Rate studies of the deposition were performed in the temperature range from 400 to 800°C. Below 525°C, an activation barrier of 26.4 kcal/mol was found, while above 525°C, a value of 5.23 kcal/mol was obtained. The effects of the presence of N-C bonds and the type of Al-N interaction within the precursor are evaluated.

Real time measurements of charged gas phase nuclei during the deposition of silicon thin films by hot wire chemical vapor deposition

2013 ◽  
Vol 13 ◽  
pp. S45-S49 ◽  
Author(s):  
Ju-Seop Hong ◽  
Chan-Soo Kim ◽  
Seung-Wan Yoo ◽  
Seong-Han Park ◽  
Sung-Soo Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Real Time ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Thin Films

Chemical Vapor Deposition of Boron Nitride Thin Films on SiC

2015 ◽  
Vol 821-823 ◽  
pp. 990-994
Author(s):  
Mihail Chubarov ◽  
Henrik Pedersen ◽  
H. Högberg ◽  
Magnus Garbrecht ◽  
Zsolt Czigány ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Gas Phase ◽  
Recent Work ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electric Properties ◽  
Rhombohedral Boron ◽  
Xrd And Tem

We give here an overview of our recent work on growth of rhombohedral boron nitride (r-BN) thin films on SiC substrates by chemical vapor deposition (CVD). We demonstrate the growth of twinned r-BN on various SiC polytypes at 1500 °C, using H2as carrier gas and triethyl boron and ammonia as precursors with an N/B ratio of ~ 640. The epitaxial relation with various substrates is determined from XRD and TEM. Adding Si to the gas phase stabilizes the r-BN phase but does not alter the electric properties of the material which remains electrically insulating.

Aspects of Gas Phase Chemistry During Chemical Vapor Deposition of Ti-Si-N Thin Films With Ti(NMe2)4 (TDMAT), NH3, and SiH4

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Similar Process ◽  
Process Conditions ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

AbstractSilane activation, predominantly in the gas phase, has been observed during the chemical vapor deposition of Ti-Si-N thin films using Ti(NMe2)4, tetrakis(dimethylamido)titanium, silane, and ammonia at 450°C, using molecular beam mass spectrometry. The extent of silane reactivity was dependent upon the relative amounts of Ti(NMe2)4and NH3. Additionally, each TDMAT molecule activates multiple silane molecules. Ti-Si-N thin films were deposited using similar process conditions as the molecular beam experiments, and RBS and XPS were used to determine their atomic composition. The variations of the Ti:Si ratio in the films as a function of Ti(NMe2)4 and NH3 flows were consistent with the changes in silane reactivity under similar conditions.

(ClAlNH)n cluster formation in the gas phase for the chemical vapor deposition of AlN thin films

2001 ◽  
Vol 542 (1-3) ◽  
pp. 239-246 ◽  
Author(s):  
Xiao-Hong Xu ◽  
Hai-Shun Wu ◽  
Fu-Qiang Zhang ◽  
Cong-Jie Zhang ◽  
Zhi-Hao Jin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Cluster Formation ◽  
Chemical Vapor

Synthesis and characterization of sulfur-incorporated microcrystalline diamond and nanocrystalline carbon thin films by hot filament chemical vapor deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 363-381 ◽  
Author(s):  
S. Gupta ◽  
B.R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Sulfur Addition ◽  
Carbon Thin Films ◽  
Hot Filament

The synthesis of microcrystalline and nanocrystalline carbon thin films using sulfur as an impurity addition to chemical vapor deposition (CVD) was investigated. Sulfur-incorporated microcrystalline diamond (μc-D:S) and nanocrystalline carbon (n-C:S) thin films were deposited on Mo substrates using methane (CH4), hydrogen (H2), and hydrogen sulfide (H2S) gas feedstocks by hot-filament CVD. These films were grown under systematically varied process parameters, while the methane concentration was fixed at 0.3% and 2% for μc-D:S and n-C:S, respectively, to study the corresponding variations of the films’ microstructure. Through these studies we obtained an integral understanding of the materials grown and learned how to control key material properties. The nanocrystalline nature of the material was proposed to be due to the change in the growth mechanisms in the gas phase (continuous secondary nucleation). The growth rate (G) was found to increase with increasing TS and [H2S] in gas phase, thus following the chemisorption model that describes the surface reactions. One of the propositions for the increase was that H2S increases the production rates of methane and consequent methyl radicals without much of its own consumption, which is almost negligible and increases the carbon-containing species. This is analogous to the increase of G with increasing methane concentration, but for the relatively high S/C ratio used here, there is a possibility of its incorporation in the material, however small. This particular conjecture was verified. In this context, the results are discussed in terms of the decomposition of reactant gases (CH4/H2/H2S) that yield ionized species. The inferences drawn are compared to those grown without sulfur to study the influence of sulfur addition to the CVD.

Thermoelectric and Electrical Properties of InSb Thin Films Prepared by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 980 ◽  
Author(s):  
Masashi Matsumoto ◽  
Jun Yamazaki ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
A Value ◽  
Maximum Value ◽  
Insb Thin Films ◽  
Metalorganic Chemical

AbstractWe studied the thermoelectric and electrical properties of InSb thin films prepared by metalorganic chemical vapor deposition. The thermoelectric properties were evaluated using power factor (Pf =α2/Ï), which is an important criterion, and a value of 10-3 W/mK2 is a standard for practical use. Maximum value of Pf was 2.4×10-3W/mK2 at 600K for 1-μm-thick InSb, 3.4×10-3W/mK2 at 600K for 3-μm-thick InSb, and 5.8×10-3W/mK2 at 600K for 5-μm-thick InSb. On the other hand, the maximum Pf of bulk-InSb was 5.4×10-3W/mK2 at 600K.

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