Summary Abstract: Kinetics of Schottky barrier formation: Au on low‐temperature GaAs(110)

1987 ◽  
Vol 5 (4) ◽  
pp. 1527-1528 ◽  
Author(s):  
K. Stiles ◽  
A. Kahn ◽  
D. G. Kilday ◽  
G. Margaritondo
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Formation ◽  
Low Temperature Gaas ◽  
Kinetics Of

The kinetics of Schottky barrier formation: Al on low-temperature GaAs(110)

1986 ◽  
Vol 58 (7) ◽  
pp. 429-432 ◽  
Author(s):  
M.K. Kelly ◽  
A. Kahn ◽  
Nacira Tache ◽  
auE. Colavita ◽  
G. Margaritondo
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Formation ◽  
Low Temperature Gaas ◽  
Kinetics Of

The low temperature aluminising kinetics of hot-work tool steels

2012 ◽  
Vol 67 (2) ◽  
pp. 133-139
Author(s):  
B. Matijević ◽  
I. Kumić ◽  
T. Belić
Keyword(s):  
Low Temperature ◽  
Tool Steels ◽  
Kinetics Of ◽  
Hot Work Tool Steels

Kinetics of catalytic conversion of methanol at higher pressures

1980 ◽  
Vol 45 (12) ◽  
pp. 3402-3407 ◽  
Author(s):  
Jaroslav Bartoň ◽  
Vladimír Pour
Keyword(s):  
Low Temperature ◽  
Reaction Kinetics ◽  
Water Vapour ◽  
Kinetic Data ◽  
Catalytic Conversion ◽  
The Given ◽  
Kinetics Of

The course of the conversion of methanol with water vapour was followed on a low-temperature Cu-Zn-Cr-Al catalyst at pressures of 0.2 and 0.6 MPa. The kinetic data were evaluated together with those obtained at 0.1 MPa and the following equation for the reaction kinetics at the given conditions was derived: r = [p(CH3OH)p(H2O)]0.5[p(H2)]-1.3.

Study of Modulation in GaAs Misfets with LT-GaAs as a Gate Insulator

1991 ◽  
Vol 241 ◽  
Author(s):  
L.-W. Yin ◽  
J. Ibbetson ◽  
M. M. Hashemi ◽  
W. Jiang ◽  
S.-Y. Hu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gaas Layer ◽  
Gate Insulator ◽  
Gate Bias ◽  
Channel Current ◽  
Turn On ◽  
Dc Characteristics ◽  
Low Temperature Gaas ◽  
Channel Separation ◽  
Lt Gaas

ABSTRACTDC characteristics of a GaAs MISFET structure using low-temperature GaAs (LTGaAs) as the gate insulator were investigated. MISFETs with different gate to channel separation (d) were fabricated. The dependence of four important device parameters such as gate-drain breakdown voltage (VBR), channel current at zero gate bias (Idss), transconductance (gm), and gate-drain turn-on voltage (Von) on the gate insulator thickness were analyzed. It was observed that (a) in terms of Idss and gin, the LT-GaAs gate insulator behaves like an undoped regular GaAs layer and (b) in terms of VBR and Von, the LT-GaAs gate insulator behaves as a trap dominated layer.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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