Damage and contamination‐free GaAs and AlGaAs etching using a novel ultrahigh‐vacuum reactive ion beam etching system with etched surface monitoring and cleaning method

1986 ◽  
Vol 4 (3) ◽  
pp. 677-680 ◽  
Author(s):  
K. Asakawa ◽  
S. Sugata
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Ion Beam Etching ◽  
Cleaning Method ◽  
Surface Monitoring ◽  
Etched Surface ◽  
Etching System ◽  
Reactive Ion Beam Etching

Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source

1997 ◽  
Vol 15 (3) ◽  
pp. 616-621 ◽  
Author(s):  
John V. Hryniewicz ◽  
Y. J. Chen ◽  
Shih Hsiang Hsu ◽  
Chau-Han D. Lee ◽  
Gyorgy A. Porkolab
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Etching System

GaAs Radical Etching with a Cl2Plasma in a Reactive Ion Beam Etching System

1984 ◽  
Vol 23 (Part 2, No. 8) ◽  
pp. L564-L566 ◽  
Author(s):  
Sumio Sugata ◽  
Kiyoshi Asakawa
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Etching System ◽  
Reactive Ion Beam Etching

Reactive Ion Beam Etching Using a Selective Gallium Doping Method

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Gallium Doping ◽  
Reactive Ion Beam Etching

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Vapor deposition polymerization and reactive ion beam etching of poly(p-xylylene) films for waveguide applications

1999 ◽  
Vol 12 (2-3) ◽  
pp. 229-233 ◽  
Author(s):  
Bernard Ratier ◽  
Yong Seok Jeong ◽  
André Moliton ◽  
Pierre Audebert
Keyword(s):  
Vapor Deposition ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching
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