Selective patterning of single‐crystal GaAs/Ge structures on Si substrates by molecular beam epitaxy

1985 ◽  
Vol 3 (3) ◽  
pp. 883-886 ◽  
Author(s):  
P. Sheldon ◽  
J. R. Dick ◽  
R. E. Hayes
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Si Substrates ◽  
Crystal Gaas

Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy

1984 ◽  
Vol 45 (3) ◽  
pp. 274-276 ◽  
Author(s):  
P. Sheldon ◽  
K. M. Jones ◽  
R. E. Hayes ◽  
B‐Y. Tsaur ◽  
John C. C. Fan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Si Substrates

Single Crystalline / Porous Amorphous Superlattice Formation by the Etching of MBE Grown Si/Si1−x Gex Layers on Si Substrates

1992 ◽  
Vol 281 ◽  
Author(s):  
T. George ◽  
W. T. Pike ◽  
R. W. Fathauer ◽  
E. W. Jones ◽  
A. Ksendzov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Reaction Front ◽  
Molecular Beam ◽  
Lattice Strain ◽  
Amorphous State ◽  
Complete Conversion ◽  
Si Substrates ◽  
Amorphous Si

ABSTRACTNovel porous amorphous/crystalline superlattices were produced by the etching of mesas containing superlattices of alternating layers of Si and Si1−xGex. These layers were grown by molecular beam epitaxy on (100) Si substrates and etched in an aqueous HF:HNO3 solution. Preferential attack and amorphization of the Si1−x Gex layers was observed, leading to the formation of alternating layers of single crystal Si and porous amorphous Si1−xGex. The etchant is highly selective and it was possible to etch extremely thin (5nm) Si0.7Ge0.3 layers between 30nm Si layers. Complete conversion of the Si0.7Ge0.3 layers to the porous amorphous state was seen in lμm wide mesas. The role of composition and thickness of the Si1−xGex layers was studied. The variation in the lateral etch depths of the Si1−xGex layers in the superlattices demonstrates that lattice strain in these layers is an important factor in the selectivity of the etch process. As the thickness of the Si1−xGex layers is decreased, transport of the etchant to and the etch products from the reaction front is reduced, limiting the penetration of the etching process. The porosities of these etched Si1−xGex layers were determined to be comparable to measured values for thick etched alloy layers.

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

2012 ◽  
Vol 111 (6) ◽  
pp. 064112 ◽  
Author(s):  
Miri Choi ◽  
Agham Posadas ◽  
Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Strain Relaxation

Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

1999 ◽  
Vol 595 ◽  
Author(s):  
U. Hömmerich ◽  
J. T. Seo ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
R. Birkhahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Excited States ◽  
Room Temperature ◽  
Molecular Beam ◽  
Average Lifetime ◽  
Green Luminescence ◽  
Si Substrates ◽  
Lifetime Analysis ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (24) ◽  
pp. 2435-2437 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
John K. Liu ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates

Novel InGaPBi single crystal grown by molecular beam epitaxy

2015 ◽  
Vol 8 (4) ◽  
pp. 041201 ◽  
Author(s):  
Li Yue ◽  
Peng Wang ◽  
Kai Wang ◽  
Xiaoyan Wu ◽  
Wenwu Pan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy

1988 ◽  
Vol 53 (22) ◽  
pp. 2179-2181 ◽  
Author(s):  
G. L. Zhou ◽  
K. M. Chen ◽  
W. D. Jiang ◽  
C. Sheng ◽  
X. J. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Si Substrates
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