Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy

1988 ◽  
Vol 53 (22) ◽  
pp. 2179-2181 ◽  
Author(s):  
G. L. Zhou ◽  
K. M. Chen ◽  
W. D. Jiang ◽  
C. Sheng ◽  
X. J. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Si Substrates

Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 72 (5) ◽  
pp. 2006-2013 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Yoichiro Tarui ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Single Crystalline ◽  
Si Substrates ◽  
Gas Source

Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

1999 ◽  
Vol 595 ◽  
Author(s):  
U. Hömmerich ◽  
J. T. Seo ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
R. Birkhahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Excited States ◽  
Room Temperature ◽  
Molecular Beam ◽  
Average Lifetime ◽  
Green Luminescence ◽  
Si Substrates ◽  
Lifetime Analysis ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (24) ◽  
pp. 2435-2437 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
John K. Liu ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates
Sign in / Sign up

Export Citation Format

Share Document