Transverse magnetoresistance and Hall effect in wide‐gap, p‐type Hg1−xMnxTe

1983 ◽  
Vol 1 (3) ◽  
pp. 1761-1764 ◽  
Author(s):  
J. R. Anderson ◽  
W. B. Johnson ◽  
D. R. Stone
Keyword(s):  
Hall Effect ◽  
Transverse Magnetoresistance ◽  
Wide Gap ◽  
P Type

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Transverse magnetoresistance in p-type germanium

1972 ◽  
Vol 13 (2) ◽  
pp. 537-543 ◽  
Author(s):  
J. S. Johannessen
Keyword(s):  
Transverse Magnetoresistance ◽  
P Type

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Carrier Generation in p-Type Wide-Gap Oxide: SnNb2O6 Foordite

2018 ◽  
Vol 30 (22) ◽  
pp. 8221-8225 ◽  
Author(s):  
Akane Samizo ◽  
Naoto Kikuchi ◽  
Yoshihiro Aiura ◽  
Keishi Nishio ◽  
Ko Mibu
Keyword(s):  
Carrier Generation ◽  
Wide Gap ◽  
P Type

PROPERTIES OF GALLIUM INDIUM ANTIMONIDE

1957 ◽  
Vol 35 (1) ◽  
pp. 91-97 ◽  
Author(s):  
J. S. Blakemore
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Indium Antimonide ◽  
Impurity Concentration ◽  
Optical Data ◽  
Type Specimens ◽  
Large Gradient ◽  
Gallium Indium Antimonide ◽  
P Type ◽  
Electrical Data

Electrical conductivity and Hall effect are measured for p-type specimens of polycrystalline GaSb.InSb with impurity concentration about 1017 cm.−3. Analysis of these data suggests that μn/μp = 11, and that the intrinsic gap varies linearly with temperature from 0.265 ev. at 0° K. Measurement of the photoconductive limit at various temperatures shows that the gap widens on heating, though the electrical data seem difficult to reconcile with the large gradient of +1.1 × 10−3 ev./°C. indicated by the optical data.

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

2013 ◽  
Vol 175-176 ◽  
pp. 119-122 ◽  
Author(s):  
Cui Yu ◽  
Jia Li ◽  
Kuanghong Gao ◽  
Tie Lin ◽  
Qingbin Liu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Weak Localization ◽  
Epitaxial Graphene ◽  
P Type

Generation of atomic group V materials for the p-type doping of wide gap II–VI semiconductors using a novel plasma cracker

1996 ◽  
Vol 161 (1-4) ◽  
pp. 86-89 ◽  
Author(s):  
H.-J. Lugauer ◽  
A. Waag ◽  
L. Worschech ◽  
W. Ossau ◽  
G. Landwehr
Keyword(s):  
Atomic Group ◽  
Group V ◽  
Wide Gap ◽  
P Type
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