Electronic structure of a complex with charge transfer and carrier energy bands in thin films of semiconductors containing carbazole

1989 ◽  
Vol 32 (7) ◽  
pp. 543-546
Author(s):  
N. A. Davidenko ◽  
N. G. Kuvshinskii ◽  
V. I. Strikha
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Charge Transfer ◽  
Energy Bands ◽  
Carrier Energy

Robustness of the electronic structure and charge transfer in topological insulator Bi2Te2Se and Bi2Se2Te thin films under an external electric field

2020 ◽  
Vol 22 (7) ◽  
pp. 3867-3874 ◽  
Author(s):  
Yurong Ruan ◽  
Lu Huang ◽  
Yanmin Yang ◽  
Guigui Xu ◽  
Kehua Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Charge Transfer ◽  
Electric Field ◽  
External Electric Field ◽  
Topological Insulator ◽  
Electrical Field ◽  
External Electrical Field

The electronic structure and charge transfer of Bi2Te2Se and Bi2Se2Te thin films are robust to an external electrical field.

scholarly journals Exploring the Franck-Condon region of a photoexcited charge transfer complex in solution to interpret femtosecond stimulated Raman spectroscopy: excited state electronic structure methods to unveil non-radiative pathways

2021 ◽  
Author(s):  
Federico Coppola ◽  
Paola Cimino ◽  
Umberto Raucci ◽  
Maria Gabriella Chiariello ◽  
Alessio Petrone ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electronic Structure ◽  
Excited State ◽  
Charge Transfer ◽  
Charge Transfer Complex ◽  
Main Role ◽  
Photoinduced Charge Transfer ◽  
Electronic Structure Methods ◽  
Franck Condon ◽  
Photoinduced Charge

We present electronic structure methods to unveil non-radiative pathways of photoinduced charge transfer (CT) reactions that play a main role in photophysics and light harvesting technologies. A prototypical π-stacked molecular...

Molecular Dynamics Study Of Si/Si3N4 Interface

1996 ◽  
Vol 446 ◽  
Author(s):  
Martina E. Bachlechner ◽  
Ingvar Ebbsjö ◽  
Rajiv K. Kalia ◽  
Priya Vashishta
Keyword(s):  
Molecular Dynamics ◽  
Electronic Structure ◽  
Charge Transfer ◽  
Md Simulations ◽  
Electronic Structure Calculations ◽  
Interface Structure ◽  
Bond Bending ◽  
Three Body ◽  
Structure Calculations ◽  
Weber Potential

AbstractStructural correlations at the Si(111)/Si3N4(0001) interface are studied using the molecular dynamics (MD) method. In the bulk, Si is described by the Stillinger-Weber potential and Si3N4 by an interaction potential which contains two-body (steric, Coulomb, electronic polarizabilities) and three-body (bond bending and stretching) terms. At the interface, the charge transfer from silicon to nitrogen is taken from LCAO electronic structure calculations. Using these Si, Si3N4 and interface interactions in MD simulations, the interface structure (atomic positions, bond lengths, and bond angles) is determined. Results for fracture in silicon are also presented.

Structural, magnetic and electronic structure studies of PrFe1−xMnxO3 (x=0, 0.1, 0.3, 0.5) thin films grown on Si (100)

2015 ◽  
Vol 628 ◽  
pp. 151-157 ◽  
Author(s):  
Khalid Sultan ◽  
M. Ikram ◽  
Sanjeev Gautam ◽  
Han-Koo Lee ◽  
Keun Hwa Chae ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure

Crystal and electronic structure of MCuO2±δ thin films

1991 ◽  
Vol 185-189 ◽  
pp. 2019-2020 ◽  
Author(s):  
N. Terada ◽  
G. Zouganelis ◽  
M. Jo ◽  
M. Hirabayashi ◽  
K. Kaneko ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Crystal And Electronic Structure

Contrasting effects of compressive and tensile strain and doping-induced opening of charge-transfer gap in NdNi[sub 0.90]Mn[sub 0.10]O[sub 3] thin films

2013 ◽  
Author(s):  
Mahesh Chandra ◽  
Amit Khare ◽  
Fozia Aziz ◽  
Rakesh Rana ◽  
D. S. Rana ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transfer ◽  
Tensile Strain
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