Interfacial reactions between Au and hydrogenated amorphous Si

1982 ◽  
Vol 21 (2) ◽  
pp. 632-636 ◽  
Author(s):  
C. C. Tsai ◽  
R. J. Nemanich ◽  
M. J. Thompson
Keyword(s):  
Interfacial Reactions ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Optical constants of rf sputtered hydrogenated amorphous Si

1979 ◽  
Vol 20 (2) ◽  
pp. 716-728 ◽  
Author(s):  
Eva C. Freeman ◽  
William Paul
Keyword(s):  
Optical Constants ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

a-Si:H/a-SiC:H Heterostructure for Bias-Controlled Photodetectors

1994 ◽  
Vol 336 ◽  
Author(s):  
G. De Cesare ◽  
F. Irrera ◽  
F. Lemmi ◽  
F. Palma ◽  
M. Tucci
Keyword(s):  
Applied Voltage ◽  
Energy Gap ◽  
The Other ◽  
Time Response ◽  
Wavelength Selection ◽  
Load Impedance ◽  
Amorphous Si ◽  
Hydrogenated Amorphous ◽  
High Rejection

ABSTRACTWe present a novel family of photodetectors based on hydrogenated amorphous Si/SiC p-i-n-i-p heterostructures. Front p-i-n and rear n-i-p diodes work one as a detector and the other as a load impedance, depending on the polarity of the applied voltage. Due to different absorption at different wavelengths, the devices operate as bias-controlled light detectors in either the blue or the red regions. The energy gap and the thickness of the two intrinsic layers have been optimized to obtain a sharp wavelength selection (centered at 430 and 630 nm) with high rejection-ratios and good quantum efficiencies. The I-V characteristics and the device time response are investigated and simulated by SPICE.

ESR and Raman Studies on Hydrogenated Amorphous Si-Sn

1984 ◽  
Vol 23 (Part 2, No. 10) ◽  
pp. L812-L814 ◽  
Author(s):  
Akiharu Morimoto ◽  
Toyotaka Kataoka ◽  
Tatsuo Shimizu
Keyword(s):  
Amorphous Si ◽  
Hydrogenated Amorphous

Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma

1986 ◽  
Vol 25 (Part 2, No. 1) ◽  
pp. L54-L56 ◽  
Author(s):  
Akihisa Matsuda ◽  
Masato Koyama ◽  
Nozomu Ikuchi ◽  
Yuichiro Imanishi ◽  
Kazunobu Tanaka
Keyword(s):  
Glow Discharge ◽  
Discharge Plasma ◽  
Glow Discharge Plasma ◽  
Guiding Principle ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Influence of hydrogen concentration on void-related microstructure in low hydrogen amorphous and crystalline silicon materials

2014 ◽  
Vol 92 (7/8) ◽  
pp. 700-704 ◽  
Author(s):  
W. Beyer ◽  
U. Breuer ◽  
R. Carius ◽  
W. Hilgers ◽  
D. Lennartz ◽  
...  
Keyword(s):  
Hydrogen Concentration ◽  
Amorphous Materials ◽  
Low Dose ◽  
Concentration Level ◽  
Crystalline Silicon ◽  
High Deposition Temperature ◽  
Diffusion Paths ◽  
Silicon Materials ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

The influence of implanted hydrogen (up to a concentration level of 3 at. %) on the microstructure of silicon (Si) materials is investigated by Fourier transform infrared spectroscopy as well as by effusion of hydrogen and of (low dose) implanted helium. Three materials of low original hydrogen concentration, crystalline Si, electron beam evaporated amorphous Si, and plasma-deposited hydrogenated amorphous Si (using high deposition temperature) were investigated. Significant differences between crystalline and amorphous materials were observed. In crystalline Si, implanted hydrogen is found to generate multivacancies that trap diffusing helium while this is not the case in amorphous Si. Accordingly, cavities where hydrogen is located in amorphous Si must be smaller than divacancies. Those cavities in amorphous Si, present from the growth process, that trap helium tend to disappear when the implanted hydrogen concentration increases. Annealing of the materials up to temperatures of 575 °C was also studied. No significant change in the density of voids (trapping helium) occur but in case of crystalline Si the bonding sites of hydrogen as well as the diffusion paths of helium change.

Photoluminescence (PL) and Optically Detected Magnetic Resonance (ODMR) Study of Visible Light Emission from Porous Si

1991 ◽  
Vol 256 ◽  
Author(s):  
P. A. Lane ◽  
L. S. Swanson ◽  
J. Shinar ◽  
S. Chumbley
Keyword(s):  
Light Emission ◽  
Porous Si ◽  
Temperature Dependent ◽  
X Band ◽  
Amorphous Si ◽  
Optically Detected ◽  
Increasing Temperature ◽  
Hydrogenated Amorphous ◽  
Visible Light Emission ◽  
Si Wafer

ABSTRACTThe photoluminescence (PL) and X-band ODMR of porous Si layers is described and discussed. The layers were prepared by anodizing the (100) face of a Si wafer at 20 mA/cm2 in 20% HF for 5 mai and passively soaking them in 36% HF for up to 10 hrs. The PL was broad and featureless, extending from ˜1.5 to ˜2.1 eV and peaking at 1.68 eV. Its intensity slightly increased upon cooling to 90 K, and then strongly decreased at lower temperatures. A ˜20 G wide asymmetric PL-enhancing ODMR was observed at g ˜2.0031 ±I 0.0009, which could be fit to a sum of two Gaussians. Their g-values were slightly temperature dependent. The ODMR intensity strongly decreased with increasing temperature, and was unobservable above ˜80 K. The results are compared to the optical properties of hydrogenated amorphous Si.

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