Photoluminescence (PL) and Optically Detected Magnetic Resonance (ODMR) Study of Visible Light Emission from Porous Si

1991 ◽  
Vol 256 ◽  
Author(s):  
P. A. Lane ◽  
L. S. Swanson ◽  
J. Shinar ◽  
S. Chumbley

ABSTRACTThe photoluminescence (PL) and X-band ODMR of porous Si layers is described and discussed. The layers were prepared by anodizing the (100) face of a Si wafer at 20 mA/cm2 in 20% HF for 5 mai and passively soaking them in 36% HF for up to 10 hrs. The PL was broad and featureless, extending from ˜1.5 to ˜2.1 eV and peaking at 1.68 eV. Its intensity slightly increased upon cooling to 90 K, and then strongly decreased at lower temperatures. A ˜20 G wide asymmetric PL-enhancing ODMR was observed at g ˜2.0031 ±I 0.0009, which could be fit to a sum of two Gaussians. Their g-values were slightly temperature dependent. The ODMR intensity strongly decreased with increasing temperature, and was unobservable above ˜80 K. The results are compared to the optical properties of hydrogenated amorphous Si.

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3635
Author(s):  
Chih-Hsien Cheng ◽  
Gong-Ru Lin

This paper reviews the developing progress on the synthesis of the silicon quantum dots (Si-QDs) via the different methods including electrochemical porous Si, Si ion implantation, and plasma enhanced chemical vapor deposition (PECVD), and exploring their featured applications for light emitting diode (LED), color-converted phosphors, and waveguide switching devices. The characteristic parameters of Si-QD LED via different syntheses are summarized for discussion. At first, the photoluminescence spectra of Si-QD and accompanied defects are analyzed to distinguish from each other. Next, the synthesis of porous Si and the performances of porous Si LED reported from different previous works are compared in detail. Later on, the Si-QD implantation in silicide (SiX) dielectric films developed to solve the instability of porous Si and their electroluminescent performances are also summarized for realizing the effect of host matrix to increase the emission quantum efficiency. As the Si-ion implantation still generates numerous defects in host matrix owing to physical bombardment, the PECVD method has emerged as the main-stream methodology for synthesizing Si-QD in SiX semiconductor or dielectric layer. This method effectively suppresses the structural matrix imperfection so as to enhance the external quantum efficiency of the Si-QD LED. With mature synthesis technology, Si-QD has been comprehensively utilized not only for visible light emission but also for color conversion and optical switching applications in future academia and industry.


1995 ◽  
Vol 67 (17) ◽  
pp. 2536-2538 ◽  
Author(s):  
K. Ito ◽  
S. Ohyama ◽  
Y. Uehara ◽  
S. Ushioda

1994 ◽  
Vol 75 (5) ◽  
pp. 2727-2729 ◽  
Author(s):  
V. P. Bondarenko ◽  
V. E. Borisenko ◽  
A. M. Dorofeev ◽  
I. N. Germanenko ◽  
S. V. Gaponenko

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4238-4241 ◽  
Author(s):  
WENJUAN CHENG ◽  
HAIJUN JIA ◽  
YUJING FANG ◽  
DEYAN HE

Hydrogenated amorphous Ge / amorphous Si multilayers with different thickness of sublayers were prepared on Si wafer by plasma-enhanced chemical vapor deposition and then oxidized at 800°C for various oxidation durations. Intense photoluminescence with multiple peaks was observed for the samples at room temperature. One peak is centered at the wavelength around 755 nm, which is almost unchanged from sample to sample and could be attributed to the luminescence from the defect states located at the interfaces between the formed nano-crystalline Ge and SiO 2. Another peak around 720 nm shows blue shift with increasing the oxidation duration, which may be deduced from the quantum confinement effect of nc-Ge. The luminescence from the samples with the same thickness of SiO 2 sublayers and different thickness of nc-Ge sublayers supported the suggested luminescence origin.


Author(s):  
C. Jacobsen ◽  
J. Fu ◽  
S. Mayer ◽  
Y. Wang ◽  
S. Williams

In scanning luminescence x-ray microscopy (SLXM), a high resolution x-ray probe is used to excite visible light emission (see Figs. 1 and 2). The technique has been developed with a goal of localizing dye-tagged biochemically active sites and structures at 50 nm resolution in thick, hydrated biological specimens. Following our initial efforts, Moronne et al. have begun to develop probes based on biotinylated terbium; we report here our progress towards using microspheres for tagging.Our initial experiments with microspheres were based on commercially-available carboxyl latex spheres which emitted ~ 5 visible light photons per x-ray absorbed, and which showed good resistance to bleaching under x-ray irradiation. Other work (such as that by Guo et al.) has shown that such spheres can be used for a variety of specific labelling applications. Our first efforts have been aimed at labelling ƒ actin in Chinese hamster ovarian (CHO) cells. By using a detergent/fixative protocol to load spheres into cells with permeabilized membranes and preserved morphology, we have succeeded in using commercial dye-loaded, spreptavidin-coated 0.03μm polystyrene spheres linked to biotin phalloidon to label f actin (see Fig. 3).


1979 ◽  
Vol 20 (2) ◽  
pp. 716-728 ◽  
Author(s):  
Eva C. Freeman ◽  
William Paul

1992 ◽  
Vol 31 (Part 2, No. 5A) ◽  
pp. L560-L563 ◽  
Author(s):  
Yukinori Ochiai ◽  
Norio Ookubo ◽  
Heiji Watanabe ◽  
Shinji Matsui ◽  
Yasunori Mochizuki ◽  
...  

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