Voltage controlled, reactive planar magnetron sputtering of AlN thin films

1982 ◽  
Vol 20 (3) ◽  
pp. 376-378 ◽  
Author(s):  
R. McMahon ◽  
J. Affinito ◽  
R. R. Parsons
2001 ◽  
Vol 668 ◽  
Author(s):  
H. Hernández-Contreras ◽  
G. Contreras-Puente ◽  
J. Aguilar-Hernández ◽  
A. Morales-Acevedo ◽  
J. Vidal-Larramendi ◽  
...  

ABSTRACTThe processing of large area thin films solar cells represents a challenge, mainly due to the need for optimal setting of the critical growth parameters for scaling-up of the processes that guarantee homogeneous properties in the sub-minimodule architecture. We have been working with a Radio-Frequency Planar Magnetron Sputtering (RF-PMS) system, processing 450 cm2 areas of CdS and CdTe thin films grown on soda lime glasses and conducting glasses (SnO2:F-7ω/ ) for CdS, using for it a 6” balanced gun. The films have been processed with substrate temperatures (Ts) of 250°C, Ar chamber-pressure of 20 mTorr, and radio frequency power of 300 watts. The films were characterized by morphological, optical and electrical techniques, presenting in this work the corresponding measurements. Our results show that the better polycrystalline perfection, adherence and pinhole free films are obtained at substrate temperatures of 250°C.


2011 ◽  
Vol 691 ◽  
pp. 145-150 ◽  
Author(s):  
M.R. Espinosa-Rosas ◽  
J.R. Aguilar-Hernández ◽  
H. Hernández-Contreras ◽  
M.A. Hernández-Pérez ◽  
G.S. Contreras-Puente ◽  
...  

We present in this work some results concerning the effects of the thermal annealing withCdCl2on the optical properties ofCdSthin films grown by radio-frequency planar magnetron sputtering technique, under optimized growth parameters: gas pressure, atmosphere, substrate temperature, power of plasma, etc. An improvement of the optical properties has been observed, mainly the presence of radiative emission (luminescence) at room temperature. This fact allowed us to carry out a deep study of the photoluminescence (PL) properties of theCdSfilms, in the range of temperature 10≤ T ≤ 300 K. Radiative emission at the high energy side has been observed and related to exitonic processes. Temperature quenching experiments gave rise to the calculation of the activation energies for each one of the radiative emissions (PLbands).


1990 ◽  
Vol 188 ◽  
Author(s):  
Zhi-Feng Zhou ◽  
Qi-Gang Zhou ◽  
Yu-Dian Fan

ABSTRACTAmorphous Gd-Fe alloy thin films were made by D.C. planar magnetron sputtering under various deposition conditions (e.g., film thickness, composition, working pressure of Ar, negative bias voltage and deposition rate). The stress, the film composition and the content of entrapped Ar in the films were measured respectively. The experimental results showed that in this case the working pressure of Ar and the negative bias voltage did not change the composition of the films, and the stresses were all compressive except for the films deposited in a very high working pressure of Ar. The origin of the compressive stress can be attributed to the atomic peening effect produced by fast neutral working gas atoms rebounded from the sputtering target. The magnitude of the compressive stress depends not only on the amount of Ar atoms incorporated in the films but also on the film microstructure such as the packing density.


2002 ◽  
Vol 403-404 ◽  
pp. 148-152 ◽  
Author(s):  
H Hernández-Contreras ◽  
G Contreras-Puente ◽  
J Aguilar-Hernández ◽  
A Morales-Acevedo ◽  
J Vidal-Larramendi ◽  
...  

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