Stresses in Amorphous Gd-Fe Alloy Thin Films Deposited by Magnetron Sputtering

1990 ◽  
Vol 188 ◽  
Author(s):  
Zhi-Feng Zhou ◽  
Qi-Gang Zhou ◽  
Yu-Dian Fan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Compressive Stress ◽  
Bias Voltage ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Working Pressure ◽  
Planar Magnetron ◽  
Very High ◽  
High Working Pressure

ABSTRACTAmorphous Gd-Fe alloy thin films were made by D.C. planar magnetron sputtering under various deposition conditions (e.g., film thickness, composition, working pressure of Ar, negative bias voltage and deposition rate). The stress, the film composition and the content of entrapped Ar in the films were measured respectively. The experimental results showed that in this case the working pressure of Ar and the negative bias voltage did not change the composition of the films, and the stresses were all compressive except for the films deposited in a very high working pressure of Ar. The origin of the compressive stress can be attributed to the atomic peening effect produced by fast neutral working gas atoms rebounded from the sputtering target. The magnitude of the compressive stress depends not only on the amount of Ar atoms incorporated in the films but also on the film microstructure such as the packing density.

Zirconia Coatings Deposited by Inductively Coupled Plasma Assisted CVD

1998 ◽  
Vol 555 ◽  
Author(s):  
P. Colpo ◽  
G. Ceccone ◽  
B. Leclercq ◽  
P. Salvatore ◽  
F. Rossi
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Gas Mixture ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Inductively Coupled ◽  
Deposition Parameters ◽  
Coating Characteristics ◽  
Dc Bias

AbstractThin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD (ICP-PACVD) reactor from tetra (tert-butoxy)-zircon precursor diluted in Ar and O2 gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed.

The effect of applied substrate negative bias voltage on the structure and properties of Al-containing a-C:H thin films

2008 ◽  
Vol 202 (12) ◽  
pp. 2684-2689 ◽  
Author(s):  
Guangan Zhang ◽  
Pengxun Yan ◽  
Peng Wang ◽  
Youming Chen ◽  
Junying Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Negative Bias ◽  
Structure And Properties ◽  
Negative Bias Voltage

The investigation on the microstructure of magnetron sputtering ion plated Al/Cu film: The effect of substrate negative bias voltage

1988 ◽  
Vol 22 (6) ◽  
pp. 757-760 ◽  
Author(s):  
B.Q. Chen ◽  
F.J. Wang ◽  
Y.K. Wang ◽  
J.X. Wang ◽  
H.M. Han ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Cu Film

scholarly journals Effect of Bias Voltage on Mechanical Properties of HiPIMS/RFMS Cosputtered Zr–Si–N Films

Materials ◽  
2019 ◽  
Vol 12 (17) ◽  
pp. 2658 ◽  
Author(s):  
Yung-I Chen ◽  
Yu-Zhe Zheng ◽  
Li-Chun Chang ◽  
Yu-Heng Liu
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Elastic Recovery ◽  
High Hardness ◽  
Chemical Compositions ◽  
Negative Bias ◽  
Rf Power ◽  
Negative Bias Voltage ◽  
Si Content

Zr–Si–N films with atomic ratios of N/(Zr + Si) of 0.54–0.82 were fabricated through high-power impulse magnetron sputtering (HiPIMS)–radio-frequency magnetron sputtering (RFMS) cosputtering by applying an average HiPIMS power of 300 W on the Zr target, various RF power levels on the Si target, and negative bias voltage levels of 0–150 V connected to the substrate holder. Applying a negative bias voltage on substrates enhanced the ion bombardment effect, which affected the chemical compositions, mechanical properties, and residual stress of the Zr–Si–N films. The results indicated that Zr–Si–N films with Si content ranging from 1.4 to 6.3 atom % exhibited a high hardness level of 33.2–34.6 GPa accompanied with a compressive stress of 4.3–6.4 GPa, an H/E* level of 0.080–0.107, an H3/E*2 level of 0.21–0.39 GPa, and an elastic recovery of 62–72%.

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