New hybrid (e‐beam/x‐ray) exposure technique for high aspect ratio microstructure fabrication

1979 ◽  
Vol 16 (6) ◽  
pp. 1631-1634 ◽  
Author(s):  
M. Hatzakis ◽  
D. Hofer ◽  
T. H. P. Chang
2000 ◽  
Author(s):  
Hsiharng Yang ◽  
Min-Chieh Chou ◽  
Horng-Jey Wang ◽  
Chengtang Pan ◽  
Jiang Long Lin

2017 ◽  
Vol 170 ◽  
pp. 49-53 ◽  
Author(s):  
Jun Zhao ◽  
Yanqing Wu ◽  
Chaofan Xue ◽  
Shumin Yang ◽  
Liansheng Wang ◽  
...  

2001 ◽  
Vol 707 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu

ABSTRACTWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.


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