Auger electron spectroscopic depth profiling techniques applied to ultrathin electrochemically deposited metal layers

1977 ◽  
Vol 14 (2) ◽  
pp. 705-710 ◽  
Author(s):  
M. L. Knotek ◽  
Rod K. Quinn ◽  
N. R. Armstrong ◽  
N. E. Vanderborgh
Keyword(s):  
Auger Electron ◽  
Depth Profiling ◽  
Deposited Metal ◽  
Electrochemically Deposited ◽  
Profiling Techniques ◽  
Metal Layers

scholarly journals Hyperfine Interactions of 57Fe Nuclei in the Study of Interdiffusion Phenomena and Phase Formation

1998 ◽  
Vol 53 (6-7) ◽  
pp. 492-500
Author(s):  
M. Carbucicchio ◽  
G. Palombarini ◽  
M. Rateo
Keyword(s):  
Thermal Aging ◽  
Conversion Electron ◽  
Auger Electron ◽  
Hyperfine Interactions ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Profiling Techniques ◽  
Properties Of Materials ◽  
Interdiffusion Phenomena

Abstract The effects of interdiffusion phenomena and reactions occurring in the early stages of the interaction at 1273 K between iron and chromium monoborides were studied by transmission Mössbauer and X-ray diffraction techniques, and modifications occurring in Fe/Al multilayers during both deposition and subsequent thermal aging at 400 K in vacuum or air were studied by conversion electron Mössbauer and Auger electron depth profiling techniques. In both cases the main objective of the work was to obtain a better understanding of the mechanisms of modification of the materials under examination with a view towards improving the properties of materials and coatings for specific applications.

Sidewall-Less Depth Profiling with Auger Electron Spectroscopy

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6483-6486
Author(s):  
Kazuyuki Inoue ◽  
Maki Tokoro ◽  
Noritomo Suzuki ◽  
Ryohji Matsubara ◽  
KenjiNakano
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling

Copper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing

1996 ◽  
Vol 428 ◽  
Author(s):  
G. O. Ramseyer ◽  
L. H. Walsh ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
R. C. Lacoe ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Copper Diffusion ◽  
Force Microscopy ◽  
Atomic Force ◽  
Line Widths ◽  
Electromigration Lifetime

AbstractPatterned 930 nm Al(1%-Si) interconnects over 147 nm of Cu were electromigration lifetime tested at 1.0–1.5 × 105 A/cm2 at 250 °C. The morphology of the surfaces of the electromigrated stripes with different line widths and times to failure were characterized by atomic force microscopy, and changes in surface roughness were compared. The diffusion of copper into the electromigrated aluminum stripes was determined by depth profiling using Auger electron spectroscopy. In particular, areas where hillocks formed were examined and compared to areas of median roughness.

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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